YES RF Power Bipolar Junction Transistors (BJT) 550

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • YES
    • NO
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2010

Microsemi

NPN

SINGLE

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

2005

Microsemi

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

BDP950H6327XTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

MS1076B

Microsemi

NPN

SINGLE

YES

16 A

PLASTIC/EPOXY

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

200 Cel

SILICON

35 V

RADIAL

O-PRFM-F4

Not Qualified

HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS

2SC2879A

Toshiba

NPN

SINGLE

YES

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

1090MP

Microsemi

NPN

SINGLE

YES

250 W

6.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

4

DISK BUTTON

Other Transistors

15

200 Cel

16 pF

SILICON

TIN LEAD

RADIAL

O-CRDB-F4

Not Qualified

e0

1214-55

Microsemi

NPN

SINGLE

YES

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

1075MP

Microsemi

NPN

SINGLE

YES

250 W

6.5 A

UNSPECIFIED

AMPLIFIER

FLAT

ROUND

1

L BAND

4

DISK BUTTON

BIP RF Small Signal

20

200 Cel

50 pF

SILICON

65 V

TIN LEAD

RADIAL

O-XRDB-F4

Not Qualified

e0

3005

Microchip Technology

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

1214-110M

Microsemi

NPN

SINGLE

YES

270 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

BIP RF Small Signal

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

BASE

Not Qualified

e0

BDP954H6327XTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

100 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

MS2209

Microsemi

NPN

SINGLE

YES

7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

S-CDFM-F2

BASE

Not Qualified

e0

MSC1090M

Microsemi

NPN

SINGLE

YES

1025 MHz

220 W

5.52 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

65 V

TIN LEAD

DUAL

O-PDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

e0

SD1897

STMicroelectronics

NPN

SINGLE

YES

29 W

2.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

15 V

DUAL

R-PDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

BDP948H6327XTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

BLT50,115

NXP Semiconductors

NPN

SINGLE

YES

2 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

Other Transistors

2 W

25

175 Cel

6 pF

SILICON

10 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e3

260

2SC2879

Toshiba

NPN

SINGLE

YES

100 MHz

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

TAN15

Microsemi

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

e0

MRF648

Motorola

NPN

SINGLE

YES

175 W

11 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.4 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

20

150 Cel

150 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F4

Not Qualified

2SC2510A

Toshiba

NPN

SINGLE

YES

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2782

Toshiba

NPN

SINGLE

YES

220 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.4 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

220 W

10

175 Cel

320 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

MRF658

Motorola

NPN

SINGLE

YES

175 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.15 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

40

150 Cel

220 pF

SILICON

16.5 V

UNSPECIFIED

O-CXFM-F4

Not Qualified

2SC2290A

Toshiba

NPN

SINGLE

YES

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2641

Toshiba

NPN

SINGLE

YES

15 W

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.7 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15 W

10

175 Cel

25 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

MRF392

Onsemi

NPN

COMMON EMITTER, 2 ELEMENTS

YES

16 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

8

FLANGE MOUNT

200 Cel

95 pF

SILICON

30 V

DUAL

R-CDFM-F8

Not Qualified

HIGH RELIABILITY

2N4041

Texas Instruments

NPN

SINGLE

YES

400 MHz

18 W

1 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

DISK BUTTON

Other Transistors

10

175 Cel

SILICON

40 V

RADIAL

O-CRDB-F4

Not Qualified

TO-117

MAX2602E/W

Analog Devices

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

150 Cel

SILICON

15 V

DUAL

R-PDSO-G8

Not Qualified

MAX2601ESA+T

Analog Devices

NPN

SINGLE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

10

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G10

1

Not Qualified

e3

30

260

MAX2601ESA+

Analog Devices

NPN

SINGLE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

MAX2602ESA+T

Analog Devices

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

MAX2602ESA+

Analog Devices

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

MC3346D

Onsemi

NPN

COMPLEX

YES

550 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

5

14

SMALL OUTLINE

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G14

Not Qualified

e0

235

MC3346DR2

Onsemi

NPN

COMPLEX

YES

550 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

5

14

SMALL OUTLINE

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G14

1

Not Qualified

e0

235

AM1214-200

STMicroelectronics

NPN

SINGLE

YES

575 W

16 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

10

250 Cel

SILICON

40 V

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1434

STMicroelectronics

NPN

SINGLE

YES

175 W

10 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

16 V

UNSPECIFIED

O-PXFM-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MSC81250M

STMicroelectronics

NPN

SINGLE

YES

600 W

17.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

DUAL

S-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1411

STMicroelectronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

330 W

40 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

15

200 Cel

360 pF

SILICON

55 V

DUAL

R-PDFM-F6

Not Qualified

HIGH RELIABILITY

AM82731-012

STMicroelectronics

NPN

SINGLE

YES

50 W

2 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

AM0912-080

STMicroelectronics

NPN

SINGLE

YES

220 W

7 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

8.4 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

20

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

AM0608-200

STMicroelectronics

NPN

SINGLE

YES

875 W

16 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.7 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

Other Transistors

15

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

AM81719-030

STMicroelectronics

NPN

SINGLE

YES

67 W

2.67 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.7 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

DUAL

S-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1414

STMicroelectronics

NPN

SINGLE

YES

150 W

9 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 Cel

SILICON

18 V

DUAL

R-PDFM-F6

Not Qualified

HIGH RELIABILITY

SD1534-01

STMicroelectronics

NPN

SINGLE

YES

219 W

5.5 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

L BAND

4

DISK BUTTON

Other Transistors

10

200 Cel

SILICON

RADIAL

O-PRDB-F4

Not Qualified

WITH EMITTER BALLASTING RESISTORS

SD1528-06

STMicroelectronics

NPN

SINGLE

YES

87.5 W

1.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

ROUND

1

L BAND

4

DISK BUTTON

Other Transistors

10

200 Cel

SILICON

RADIAL

O-PRDB-F4

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

SD1540

STMicroelectronics

NPN

SINGLE

YES

22 A

PLASTIC/EPOXY

SWITCHING

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

Other Transistors

175 Cel

SILICON

DUAL

S-PDFM-F2

BASE

Not Qualified

AM82731-025

STMicroelectronics

NPN

SINGLE

YES

100 W

4 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6.2 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1391

STMicroelectronics

NPN

SINGLE

YES

470 MHz

29 W

2.5 A

METAL

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

10

200 Cel

24 pF

SILICON

25 V

DUAL

R-MDFM-F6

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

SD1488

STMicroelectronics

NPN

SINGLE

YES

145 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 Cel

SILICON

16 V

GOLD

UNSPECIFIED

O-PXFM-F6

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

e4

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.