YES RF Power Bipolar Junction Transistors (BJT) 550

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BLT93/SL

NXP Semiconductors

NPN

SINGLE

YES

1.2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5.5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

25

200 Cel

SILICON

10 V

RADIAL

O-CRDB-F4

Not Qualified

HIGH RELIABILITY

933994040114

NXP Semiconductors

NPN

SINGLE

YES

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLV91/SL

NXP Semiconductors

NPN

SINGLE

YES

6 W

.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

Other Transistors

25

200 Cel

SILICON

16 V

RADIAL

O-CRDB-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLS3135-50TRAY

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

934045790114

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLU45/12

NXP Semiconductors

NPN

SINGLE

YES

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.8 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

15

200 Cel

SILICON

16.5 V

UNSPECIFIED

O-CXFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLU56

NXP Semiconductors

NPN

SINGLE

YES

.2 A

PLASTIC/EPOXY

AMPLIFIER

12 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

2 W

25

175 Cel

3 pF

SILICON

16 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

e3

RXB12350Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

Not Qualified

BLX98

NXP Semiconductors

NPN

SINGLE

YES

2500 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

21.5 W

15

200 Cel

30 pF

SILICON

27 V

RADIAL

O-PRDB-F4

Not Qualified

RZ2731B16W

NXP Semiconductors

NPN

SINGLE

YES

1.4 A

CERAMIC, METAL-SEALED COFIRED

6 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

Not Qualified

MRF898

NXP Semiconductors

NPN

SINGLE

YES

175 W

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

175 W

20

150 Cel

SILICON

30 V

DUAL

R-CDFM-F6

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLS3135-65TRAY

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLV909T/R

NXP Semiconductors

NPN

SINGLE

YES

1.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

29 W

30

200 Cel

SILICON

30 V

DUAL

R-CDSO-G8

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RX1214B300YTRAY

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLV31

NXP Semiconductors

NPN

SINGLE

YES

1100 MHz

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

DISK BUTTON

48 W

15

200 Cel

SILICON

30 V

RADIAL

O-CRDB-F4

Not Qualified

BLV10

NXP Semiconductors

NPN

SINGLE

YES

950 MHz

20 W

1.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

1

ISOLATED

Not Qualified

BLV2042

NXP Semiconductors

NPN

SINGLE

YES

1.2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

12 W

30

200 Cel

SILICON

28 V

DUAL

R-CDSO-G8

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLV857

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

80 W

7.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

80 W

30

200 Cel

SILICON

28 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

RX1214B170W

NXP Semiconductors

NPN

SINGLE

YES

350 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

PLB16012U

NXP Semiconductors

NPN

SINGLE

YES

15 W

.9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

15 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

LWE2025R

NXP Semiconductors

NPN

SINGLE

YES

8 W

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

ROUND

1

S BAND

2

DISK BUTTON

Other Transistors

8 W

200 Cel

SILICON

16 V

RADIAL

O-CRDB-F2

EMITTER

Not Qualified

BLV193

NXP Semiconductors

NPN

SINGLE

YES

44 W

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

44 W

25

200 Cel

SILICON

16 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

PXB16050U

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

67 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

LXE15450X

NXP Semiconductors

NPN

SINGLE

YES

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

70 W

15

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLS3135-50

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

80 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

75 V

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

RN3034B80W

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

BASE

Not Qualified

934045800114

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

PTB42003X

NXP Semiconductors

NPN

SINGLE

YES

14 W

.75 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 dB

FLAT

RECTANGULAR

1

C BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

RX1214B130Y

NXP Semiconductors

NPN

SINGLE

YES

1200 MHz

280 W

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

BLV861

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

220 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

220 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F4

1

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV103

NXP Semiconductors

NPN

SINGLE

YES

17 W

1.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

17 W

20

200 Cel

8 pF

SILICON

30 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RX1214B300Y

NXP Semiconductors

NPN

SINGLE

YES

630 W

21 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

MX0912B250Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

PVB42004X

NXP Semiconductors

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

C BAND

2

FLANGE MOUNT

18 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MX0912B251Y

NXP Semiconductors

NPN

SINGLE

YES

690 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BFG741TRL

NXP Semiconductors

NPN

SINGLE

YES

7000 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

15 V

DUAL

R-PDSO-G4

Not Qualified

RZB06050W

NXP Semiconductors

NPN

SINGLE

YES

540 MHz

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

PZ1418B30U

NXP Semiconductors

NPN

SINGLE

YES

45 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.3 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

45 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

NOT APPLICABLE

BASE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RZ2731B48W

NXP Semiconductors

NPN

SINGLE

YES

4.2 A

CERAMIC, METAL-SEALED COFIRED

6 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

Not Qualified

934009540114

NXP Semiconductors

NPN

SINGLE

YES

25 A

METAL

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

20 V

DUAL

R-MDFM-F2

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLV98

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F6

Not Qualified

BLT94

NXP Semiconductors

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

SILICON

10 V

DUAL

R-CDSO-G8

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RZ1214B65YTRAY

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

MX1011B200Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

PLB16030U

NXP Semiconductors

NPN

SINGLE

YES

2.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

40 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MX0912B350Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MRF858S

NXP Semiconductors

NPN

SINGLE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLATPACK

Other Transistors

20 W

30

200 Cel

8 pF

SILICON

30 V

DUAL

R-CDFP-F6

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLV38

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

5

FLANGE MOUNT

290 W

15

200 Cel

SILICON

40 V

DUAL

R-CDFM-F5

ISOLATED

Not Qualified

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.