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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MRF858S |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Minimum Power Gain (Gp): 11 dB; Terminal Form: FLAT; |
| Datasheet | MRF858S Datasheet |
| In Stock | 4,450 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 11 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 30 |
| No. of Terminals: | 6 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 20 W |
| Maximum Collector-Emitter Voltage: | 30 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | R-CDFP-F6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Additional Features: | WITH EMITTER BALLASTING RESISTORS |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Collector-Base Capacitance: | 8 pF |
| Maximum Power Dissipation Ambient: | 20 W |
