NXP Semiconductors - MX0912B250Y

  1. Home
  2. NXP Semiconductors - MX0912B250Y
MX0912B250Y by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MX0912B250Y
Description NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR; No. of Terminals: 2;
Datasheet MX0912B250Y Datasheet
In Stock2,324
NAME DESCRIPTION
Minimum Power Gain (Gp): 7 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: BASE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,324 - -

Popular Products

Category Top Products

BLS2731-10 by NXP Semiconductors

BLS2731-10

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
MC3346D by Onsemi

MC3346D

Onsemi

MC3346D by Onsemi is a NPN BJT with 5 elements, 14 terminals, and max. IC of 0.05A. It operates at 550MHz fT and has VCE of 15V. Ideal for RF applications due to its small outline package style and Gull Wing terminal form.
AM1011-400 by STMicroelectronics

AM1011-400

STMicroelectronics

STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
LTE42012RTRAY by NXP Semiconductors

LTE42012RTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: C BAND;
2N3866A by New Jersey Semiconductor Products

2N3866A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
PTB32003X by NXP Semiconductors

PTB32003X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Package Shape: ROUND;
BLV194 by NXP Semiconductors

BLV194

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
RX1214B300Y,114 by NXP Semiconductors

RX1214B300Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS;
BLS2731-20 by NXP Semiconductors

BLS2731-20

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;
2N3632 by NXP Semiconductors

2N3632

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): 1 A; Maximum Power Dissipation Ambient: 23 W;
2SC2103A by Toshiba

2SC2103A

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Style (Meter): POST/STUD MOUNT; Maximum Collector-Emitter Voltage: 18 V;
BLS3135-50 by NXP Semiconductors

BLS3135-50

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; No. of Elements: 1;
SD1224-02 by STMicroelectronics

SD1224-02

STMicroelectronics

SD1224-02 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at up to 200 °C, and supports frequencies up to 175MHz. Its ceramic, metal-sealed package ensures durability in demanding environments.
934021700114 by NXP Semiconductors

934021700114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;
AM80814-005 by STMicroelectronics

AM80814-005

STMicroelectronics

STMicroelectronics' AM80814-005 is a NPN RF BJT transistor with 8.5 dB min power gain, suitable for L Band applications. It has a max power dissipation of 23 W and operates at temperatures up to 250 °C, making it ideal for high-power switching in various electronic devices.
2SC3218-M by Renesas Electronics

2SC3218-M

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20;
BLV2042 by NXP Semiconductors

BLV2042

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Terminal Form: GULL WING;
MSC83303 by STMicroelectronics

MSC83303

STMicroelectronics

STMicroelectronics' MSC83303 is a NPN RF BJT with 10W power dissipation, hFE of 30, and 0.54A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
ISL73127EHVF by Renesas Electronics

ISL73127EHVF

Renesas Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Terminal Finish: GOLD;
BLV101A by NXP Semiconductors

BLV101A

NXP Semiconductors

BLV101A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and supports up to 10 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.