NXP Semiconductors - 935384108598

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935384108598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935384108598
Description RF Power Bipolar Transistors;
Datasheet 935384108598 Datasheet
In Stock4,314
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2SC3613 by Toshiba

2SC3613

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
2SC1765 by Toshiba

2SC1765

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBFM-P3; Package Shape: ROUND;
SD1433 by STMicroelectronics

SD1433

STMicroelectronics

SD1433 by STMicroelectronics is a NPN RF BJT with 4 terminals, suitable for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 58W, operating temperature up to 175 °C, and collector current of 2.5A.
BLV945B by NXP Semiconductors

BLV945B

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BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
MRFX035H-2MHZ by NXP Semiconductors

MRFX035H-2MHZ

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RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SD1542 by STMicroelectronics

SD1542

STMicroelectronics

SD1542 by STMicroelectronics is a NPN RF BJT with 1300W power dissipation, suitable for L Band applications. Featuring a max collector current of 40A and operating temperature of 175 °C, it is designed for high-power RF amplification in various systems. This single configuration transistor has a ceramic-metal-sealed co-fired package ideal for surface mount installations.
MRF898 by NXP Semiconductors

MRF898

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
2SA1537D by Onsemi

2SA1537D

Onsemi

Onsemi's 2SA1537D is a PNP RF BJT with max. Vce of 70V and Ic of 0.5A, ideal for switching applications at 700MHz. It features a plastic/epoxy body, single configuration, and through-hole terminals in a rectangular package style.
RZ2731B60W by NXP Semiconductors

RZ2731B60W

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 5.7 A; Highest Frequency Band: S BAND;
RZ2731B16W by NXP Semiconductors

RZ2731B16W

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;
ISL73096RHF/PROTO by Renesas Electronics

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Renesas Electronics

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;
AM80814-025 by STMicroelectronics

AM80814-025

STMicroelectronics

STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.
AM1416-220 by STMicroelectronics

AM1416-220

STMicroelectronics

STMicroelectronics AM1416-220 is an NPN RF BJT transistor for amplifier applications. It operates in L Band with a highest frequency band. The package is ceramic-metal-sealed cofired, surface mountable, and has 2 terminals in a rectangular shape suitable for flange mounting.
BLV97 by NXP Semiconductors

BLV97

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NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
2SC4178-T1-A by Renesas Electronics

2SC4178-T1-A

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RF Power Bipolar Transistors;
PTB20151 by Infineon Technologies

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Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7.7 A; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;
MX0912B250Y by NXP Semiconductors

MX0912B250Y

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MX0912B250Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.
2005 by Advanced Power Technology

2005

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2;
2SC5551AE-TD-E by Onsemi

2SC5551AE-TD-E

Onsemi

RF Power Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
AM82731-012 by STMicroelectronics

AM82731-012

STMicroelectronics

STMicroelectronics' AM82731-012 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 6 dB, can handle up to 50 W power dissipation, and operates in the S band frequency range. The transistor is surface-mountable and has a max collector current of 2 A, making it suitable for high-frequency switching applications.