YES RF Power Bipolar Junction Transistors (BJT) 550

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

PTB20181

Infineon Technologies

NPN

SINGLE

YES

1.1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

NO LEAD

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

CHIP CARRIER

SILICON

28 V

MATTE TIN

DUAL

R-CDCC-N4

Not Qualified

HIGH RELIABILITY

e3

PTB20134

Infineon Technologies

NPN

YES

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F6

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20081

Infineon Technologies

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

e3

BFG235E6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

5500 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

Other Transistors

75

150 Cel

3.6 pF

SILICON

15 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

BUILT IN EMITTER BALLASTING RESISTOR

NOT SPECIFIED

NOT SPECIFIED

PTB20170

Infineon Technologies

NPN

SINGLE

YES

6.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20151

Infineon Technologies

NPN

SINGLE

YES

7.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

BFT98B

Infineon Technologies

NPN

SINGLE

YES

3300 MHz

2.3 W

.2 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

DISK BUTTON

Other Transistors

150 Cel

SILICON

20 V

RADIAL

O-CRDB-F4

Not Qualified

PTB20111

Infineon Technologies

NPN

SINGLE

YES

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20074

Infineon Technologies

NPN

YES

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

L BAND

6

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F6

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20017

Infineon Technologies

NPN

COMMON EMITTER, 2 ELEMENTS

YES

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20046

Infineon Technologies

NPN

YES

.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

L BAND

6

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F6

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20082

Infineon Technologies

NPN

SINGLE

YES

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

SP000748378

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150 Cel

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101

BDP948E6433HTMA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101

BDP950-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

260

BDP954-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP950-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

e0

BDP948E6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

AEC-Q101

BDP948-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP950

Infineon Technologies

PNP

SINGLE

YES

100 MHz

1.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BDP948-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP948H6327TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

BDP954-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BDP948H6433XTMA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

BDP948

Infineon Technologies

PNP

SINGLE

YES

100 MHz

1.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BDP954H6327TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

BDP954

Infineon Technologies

PNP

SINGLE

YES

100 MHz

1.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

100 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BDP950E6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

AEC-Q101

BDP950H6327TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

60 V

DUAL

R-PDSO-G4

COLLECTOR

BDP948H6433TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

MAX2601ESA

Maxim Integrated

NPN

SINGLE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G8

1

Not Qualified

e0

MAX2602ESA-T

Maxim Integrated

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G8

1

Not Qualified

e0

MAX2601ESA-T

Maxim Integrated

NPN

SINGLE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G8

1

Not Qualified

e0

MAX2602ESA

Maxim Integrated

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G8

1

Not Qualified

e0

MAX2602E/D

Maxim Integrated

NPN

SINGLE WITH BUILT-IN DIODE

YES

1.2 A

UNSPECIFIED

AMPLIFIER

NO LEAD

UNSPECIFIED

1

ULTRA HIGH FREQUENCY BAND

UNCASED CHIP

150 Cel

SILICON

15 V

TIN LEAD

UPPER

X-XUUC-N

3

Not Qualified

e0

2SC2643

Toshiba

NPN

SINGLE

YES

50 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.9 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

50 W

10

175 Cel

80 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2640

Toshiba

NPN

SINGLE

YES

70 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.4 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

70 W

10

175 Cel

160 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2638

Toshiba

NPN

SINGLE

YES

15 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.8 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15 W

10

175 Cel

25 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2782A

Toshiba

NPN

SINGLE

YES

220 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

10

175 Cel

320 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC3147

Toshiba

NPN

SINGLE

YES

150 W

14 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 W

10

175 Cel

330 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC2639

Toshiba

NPN

SINGLE

YES

35 W

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.6 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

35 W

10

175 Cel

80 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2783

Toshiba

NPN

SINGLE

YES

150 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.88 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 W

10

175 Cel

150 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC3006

Toshiba

NPN

SINGLE

YES

10 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.8 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10 W

10

175 Cel

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2642

Toshiba

NPN

SINGLE

YES

30 W

2.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

30 W

10

175 Cel

40 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

ISL73128RHVF

Renesas Electronics

PNP

SEPARATE, 5 ELEMENTS

YES

5500 MHz

.0113 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

.5 V

FLAT

RECTANGULAR

5

ULTRA HIGH FREQUENCY BAND

16

FLATPACK

1.25 W

20

125 Cel

SILICON

8 V

-55 Cel

GOLD

DUAL

R-CDFP-F16

LOW NOISE

e4

30

260

MIL-38535; RH - 100K Rad(Si)

5962F0721804V9A

Renesas Electronics

NPN AND PNP

SEPARATE, 5 ELEMENTS

YES

8000 MHz

.0113 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

5

ULTRA HIGH FREQUENCY BAND

16

UNCASED CHIP

1.25 W

40

125 Cel

SILICON

8 V

-55 Cel

Gold (Au)

UPPER

R-XUUC-N16

Qualified

LOW NOISE

e4

30

260

MIL-38535; RH - 300K Rad(Si)

ISL73096EHVX

Renesas Electronics

NPN AND PNP

SEPARATE, 5 ELEMENTS

YES

8000 MHz

.0113 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

5

ULTRA HIGH FREQUENCY BAND

16

UNCASED CHIP

1.25 W

40

125 Cel

SILICON

8 V

-55 Cel

GOLD

UPPER

R-XUUC-N16

LOW NOISE

e4

30

260

MIL-38535; RH - 100K Rad(Si)

ISL73127RHVF

Renesas Electronics

NPN

SEPARATE, 5 ELEMENTS

YES

8000 MHz

.0113 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

.5 V

FLAT

RECTANGULAR

5

ULTRA HIGH FREQUENCY BAND

16

FLATPACK

1.25 W

40

125 Cel

SILICON

8 V

-55 Cel

GOLD

DUAL

R-CDFP-F16

LOW NOISE

e4

30

260

MIL-38535; RH - 100K Rad(Si)

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.