STMicroelectronics RF Power Bipolar Junction Transistors (BJT) 185

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
SD1731-14	STMicroelectronics	NPN	SINGLE	NO		257 W	20 A	PLASTIC/EPOXY			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	5	200 Cel		SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified
AM1214-175	STMicroelectronics	NPN	SINGLE	YES		330 W	14 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.3 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1541-09	STMicroelectronics	NPN	SINGLE	YES		1460 W	22 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	5	200 Cel		SILICON	65 V		DUAL	R-CDFM-F2	BASE	Not Qualified
SD1274-01	STMicroelectronics	NPN	SINGLE	NO	175 MHz	70 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	20	200 Cel		SILICON	16 V		RADIAL	O-PRFM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
SD1390	STMicroelectronics	NPN	SINGLE	YES	470 MHz	8.33 W	.35 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	DISK BUTTON	Other Transistors	20	200 Cel	5 pF	SILICON	24 V		RADIAL	O-CRDB-F4		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
MSC81450M	STMicroelectronics	NPN	SINGLE	YES		910 W	28 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM1214-300	STMicroelectronics	NPN	SINGLE	YES		730 W	18.75 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.3 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1011-400	STMicroelectronics	NPN	SINGLE	YES		880 W	24 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	8 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1011-070	STMicroelectronics	NPN	SINGLE	YES		200 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.7 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	20	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC82010	STMicroelectronics	NPN	SINGLE	NO		35 W	1.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel	19 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1542-42	STMicroelectronics	NPN	SINGLE	YES		1670 W	45 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD1660	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		310 W	.4 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	15	200 Cel	100 pF	SILICON	30 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	HIGH RELIABILITY
AM81214-6	STMicroelectronics	NPN	SINGLE	YES		16.7 W	.82 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM2729-110	STMicroelectronics	NPN	SINGLE	YES		438 W	12 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.5 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM81719-040	STMicroelectronics	NPN	SINGLE	YES		79.5 W	4.8 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6.7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	30	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1538-02	STMicroelectronics	NPN	SINGLE	YES		583 W	11 A	PLASTIC/EPOXY	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	5	200 Cel		SILICON			DUAL	S-PDFM-F2	BASE	Not Qualified
SD1530-08	STMicroelectronics	NPN	SINGLE	YES		87.5 W	2.6 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	200 Cel		SILICON	65 V		DUAL	S-CDFM-F2	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1458	STMicroelectronics	NPN	SINGLE	YES		140 W	10 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	10	175 Cel	80 pF	SILICON	35 V	GOLD	UNSPECIFIED	O-PXFM-F6		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR	e4
AM83135-010	STMicroelectronics	NPN	SINGLE	YES		50 W	2 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1446	STMicroelectronics	NPN	SINGLE	NO			12 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	BIP RF Small Signal			300 pF	SILICON	18 V		RADIAL	O-PRFM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
SD1274	STMicroelectronics	NPN	SINGLE	NO	175 MHz	70 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	20	200 Cel		SILICON	16 V		RADIAL	O-PRPM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
AM83135-050	STMicroelectronics	NPN	SINGLE	YES		312 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM83135-005	STMicroelectronics	NPN	SINGLE	YES		40 W	1.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1680	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		310 W	.4 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	15	200 Cel	100 pF	SILICON	30 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	HIGH RELIABILITY
AM1214-130	STMicroelectronics	NPN	SINGLE	YES			12 A	METAL	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON			DUAL	R-MDFM-F2	BASE	Not Qualified
SD1895-03	STMicroelectronics	NPN	SINGLE	YES		37.2 W	3 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON	15 V		DUAL	R-PDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD4013	STMicroelectronics	NPN	SINGLE	YES		70 W	3 A	PLASTIC/EPOXY			FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	10	200 Cel	30 pF	SILICON	30 V		UNSPECIFIED	O-PXFM-F6		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1565	STMicroelectronics	NPN	COMMON BASE, 2 ELEMENTS	YES		1100 W	43.2 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		175 Cel		SILICON			DUAL	R-CDFM-F4	BASE	Not Qualified
SD1730	STMicroelectronics	NPN	SINGLE	NO		320 W	16 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON	35 V		RADIAL	O-PRFM-F4		Not Qualified
SD1563	STMicroelectronics	NPN	SINGLE	YES		875 W	21.6 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors		175 Cel		SILICON	28 V		DUAL	S-CDFM-F2	BASE	Not Qualified
SD1731(TH562)	STMicroelectronics	NPN	SINGLE	YES		233 W	20 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	15	150 Cel		SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified	HIGH RELIABILITY
SD4100	STMicroelectronics	NPN	SINGLE	YES		220 W	16 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	25	200 Cel		SILICON	32 V	NICKEL	DUAL	R-CDFM-F4	EMITTER	Not Qualified
SD1728D	STMicroelectronics	NPN	SINGLE	YES			40 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT			200 Cel	360 pF	SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified
AM1517-012	STMicroelectronics	NPN	SINGLE	YES		27 W	1.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM0608-450	STMicroelectronics	NPN	SINGLE	YES		1500 W	32 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6.9 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1275-01	STMicroelectronics	NPN	SINGLE	NO	160 MHz	70 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	20	200 Cel		SILICON	16 V		RADIAL	O-PRFM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
AM83135-001	STMicroelectronics	NPN	SINGLE	YES			.45 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC81350M	STMicroelectronics	NPN	SINGLE	YES		720 W	19.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1729(TH416)	STMicroelectronics	NPN	SINGLE	YES			12 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT			200 Cel		SILICON	35 V		RADIAL	O-PRFM-F4		Not Qualified
AM81214-030	STMicroelectronics	NPN	SINGLE	YES		63 W	2.75 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.2 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1542-04	STMicroelectronics	NPN	SINGLE	YES		1350 W	40 A	CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	5	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM1214-100	STMicroelectronics	NPN	SINGLE	YES		270 W	13 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1517-025	STMicroelectronics	NPN	SINGLE	YES		45 W	2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
SD1476	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES			25 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	10	200 Cel	220 pF	SILICON	40 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1275	STMicroelectronics	NPN	SINGLE	NO		70 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	20	200 Cel		SILICON	16 V	GOLD	RADIAL	O-PRPM-F4		Not Qualified		e4
AM80912-085	STMicroelectronics	NPN	SINGLE	YES		300 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	20	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD1487	STMicroelectronics	NPN	SINGLE	NO			20 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	BIP RF Small Signal		200 Cel		SILICON	18 V		RADIAL	O-PRFM-F4		Not Qualified	WITH EMITTER BALLASTING RESISTORS
MSC82304	STMicroelectronics	NPN	SINGLE	NO		11.5 W	.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	200 Cel	5 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.