Texas Instruments RF Power Bipolar Junction Transistors (BJT) 4
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum VCEsat | Minimum Power Gain (Gp) | Terminal Form | Package Shape | No. of Elements | Highest Frequency Band | No. of Terminals | Package Style (Meter) | Sub-Category | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
NPN |
SINGLE |
NO |
175 MHz |
23 W |
3 A |
CERAMIC, METAL-SEALED COFIRED |
PIN/PEG |
ROUND |
1 |
VERY HIGH FREQUENCY BAND |
3 |
POST/STUD MOUNT |
Other Transistors |
5 |
200 Cel |
25 pF |
SILICON |
40 V |
UPPER |
O-CUPM-P3 |
Not Qualified |
TO-60 |
|||||||||||||||
|
Texas Instruments |
NPN |
SINGLE |
NO |
400 MHz |
40 W |
5 A |
UNSPECIFIED |
FLAT |
RECTANGULAR |
1 |
VERY HIGH FREQUENCY BAND |
4 |
POST/STUD MOUNT |
Other Transistors |
10 |
175 Cel |
18 pF |
SILICON |
40 V |
RADIAL |
R-XRPM-F4 |
Not Qualified |
TO-117 |
|||||||||||||||
|
Texas Instruments |
NPN |
SINGLE |
YES |
400 MHz |
18 W |
1 A |
CERAMIC, METAL-SEALED COFIRED |
FLAT |
ROUND |
1 |
4 |
DISK BUTTON |
Other Transistors |
10 |
175 Cel |
SILICON |
40 V |
RADIAL |
O-CRDB-F4 |
Not Qualified |
TO-117 |
|||||||||||||||||
|
Texas Instruments |
NPN |
SINGLE |
NO |
400 MHz |
11 W |
1.5 A |
METAL |
WIRE |
ROUND |
1 |
3 |
POST/STUD MOUNT |
Other Transistors |
10 |
175 Cel |
SILICON |
40 V |
UPPER |
O-MUPM-W3 |
Not Qualified |
TO-60 |
RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.
RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.
The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.
RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.
Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.