Toshiba RF Power Bipolar Junction Transistors (BJT) 49

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Manufacturers (1)
    • Toshiba
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2SC2879A

Toshiba

NPN

SINGLE

YES

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2879

Toshiba

NPN

SINGLE

YES

100 MHz

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2290

Toshiba

NPN

SINGLE

NO

100 MHz

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11.8 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2652

Toshiba

NPN

SINGLE

NO

100 MHz

300 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

300 W

10

175 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2510

Toshiba

NPN

SINGLE

NO

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12.2 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2510A

Toshiba

NPN

SINGLE

YES

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2782

Toshiba

NPN

SINGLE

YES

220 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.4 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

220 W

10

175 Cel

320 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC2290A

Toshiba

NPN

SINGLE

YES

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2641

Toshiba

NPN

SINGLE

YES

15 W

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.7 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15 W

10

175 Cel

25 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2104

Toshiba

NPN

SINGLE

NO

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

20 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2395

Toshiba

NPN

SINGLE

NO

200 MHz

40 W

5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

17 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

40 W

20

175 Cel

150 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2643

Toshiba

NPN

SINGLE

YES

50 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.9 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

50 W

10

175 Cel

80 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2318

Toshiba

NPN

SINGLE

NO

2700 MHz

.35 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

3.5 pF

SILICON

15 V

TIN LEAD

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-33

e0

2SC4479

Toshiba

NPN

SINGLE

NO

1100 MHz

1.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10 W

20

150 Cel

5 pF

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC2391

Toshiba

NPN

SINGLE

NO

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

20 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2118

Toshiba

NPN

SINGLE

NO

1.4 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

25 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC2105

Toshiba

NPN

SINGLE

NO

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2380

Toshiba

NPN

SINGLE

NO

2.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

45 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC4605

Toshiba

NPN

SINGLE

NO

1100 MHz

2 W

.5 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10 W

20

150 Cel

5.2 pF

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

e0

2SC2640

Toshiba

NPN

SINGLE

YES

70 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.4 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

70 W

10

175 Cel

160 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC1955

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBCY-W3

EMITTER

Not Qualified

e0

2SC3613

Toshiba

NPN

SINGLE

NO

3500 MHz

1.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5 W

20

150 Cel

5 pF

SILICON

18 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC4201

Toshiba

NPN

SINGLE

NO

1100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

100 V

SINGLE

R-PSFM-T3

BASE

Not Qualified

TO-220AB

2SC2381

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

80 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2106

Toshiba

NPN

SINGLE

NO

2.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

45 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2098

Toshiba

NPN

SINGLE

NO

100 MHz

6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

120 pF

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

S-AU14

Toshiba

AMPLIFIER

ULTRA HIGH FREQUENCY BAND

SILICON

Not Qualified

2SC4202

Toshiba

NPN

SINGLE

NO

1100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5 pF

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

2SC2638

Toshiba

NPN

SINGLE

YES

15 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.8 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15 W

10

175 Cel

25 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC1765

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

FLANGE MOUNT

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC2782A

Toshiba

NPN

SINGLE

YES

220 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

10

175 Cel

320 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC4200

Toshiba

NPN

SINGLE

NO

2500 MHz

1.5 W

.6 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5 W

20

150 Cel

5 pF

SILICON

18 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC1001

Toshiba

NPN

SINGLE

NO

.5 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

10 pF

SILICON

20 V

TIN LEAD

BOTTOM

O-MBCY-W3

EMITTER

Not Qualified

TO-39

e0

2SC2099

Toshiba

NPN

SINGLE

NO

100 MHz

60 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

175 Cel

250 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2379

Toshiba

NPN

SINGLE

NO

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

25 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2117

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC3147

Toshiba

NPN

SINGLE

YES

150 W

14 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 W

10

175 Cel

330 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC2181

Toshiba

NPN

SINGLE

NO

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

160 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2639

Toshiba

NPN

SINGLE

YES

35 W

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.6 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

35 W

10

175 Cel

80 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2783

Toshiba

NPN

SINGLE

YES

150 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.88 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 W

10

175 Cel

150 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2SC2101

Toshiba

NPN

SINGLE

NO

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2173

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2103A

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC1169

Toshiba

NPN

SINGLE

NO

1 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

10 pF

SILICON

20 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC3006

Toshiba

NPN

SINGLE

YES

10 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.8 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10 W

10

175 Cel

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2319

Toshiba

NPN

SINGLE

NO

2900 MHz

.35 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

4.2 pF

SILICON

15 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2102

Toshiba

NPN

SINGLE

NO

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2178

Toshiba

NPN

SINGLE

NO

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

80 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.