Toshiba - S-AU14

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 9 dB;

LLE18150X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 25W, operates up to 200 °C, and offers a min power gain of 7.8 dB in the L band. Its flat terminal design allows for easy surface mounting.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

2N3866A by Microchip Technology is an NPN RF BJT with a VCEsat of 1V, Gp of 10dB, and hFE of 25. It is used as an amplifier in the UHF band due to its high fT of 800MHz. The transistor has a max VCE of 30V and IC of 0.4A, making it suitable for high-frequency applications.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Case Connection: BASE; Maximum Operating Temperature: 200 Cel;

The Onsemi 2SA1403E is a PNP RF Power BJT with max. Vce of 60V and Ic of 0.5A. It has fT of 800MHz, ideal for switching applications in electronics due to its high frequency capabilities and single-terminal configuration. The transistor's package style is flange mount with through-hole terminals made of Tin/Copper/Silver/Nickel alloy.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.25 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Terminal Form: FLAT; No. of Elements: 1;

NPN; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

2N5641 by STMicroelectronics is a NPN RF BJT with 4 terminals, 15W power dissipation, and 300MHz fT. Ideal for amplifier applications in the VHF band due to its 35V VCE max and SILICON material. Operates at up to 200°C with a hFE min of 5 for high-performance requirements.

RF Power Bipolar Transistors;

SD1730 by STMicroelectronics is a NPN RF Power BJT with 320W power dissipation, 35V max collector-emitter voltage, and 16A max collector current. It operates in the very high frequency band and is ideal for applications requiring high-power amplification in radio frequency circuits.

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: UNSPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 6 dB;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .45 A; Maximum Collector-Emitter Voltage: 16 V; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;