NXP Semiconductors - BLU56T/R

  1. Home
  2. NXP Semiconductors - BLU56T/R
BLU56T/R by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLU56T/R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 16 V; Terminal Position: DUAL;
Datasheet BLU56T/R Datasheet
In Stock4,143
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: 3 pF
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,143 - -

Popular Products

Category Top Products

SD1274 by STMicroelectronics

SD1274

STMicroelectronics

SD1274 by STMicroelectronics is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for amplifier applications in the very high frequency band, it has a single configuration and flat terminals in a round package.
1214-55 by Advanced Power Technology

1214-55

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;
2SC2290 by Toshiba

2SC2290

Toshiba

The Toshiba 2SC2290 is a NPN RF Power BJT with 11.8 dB power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 175W, collector-emitter voltage of 18V, and transition frequency of 100MHz.
2N4440 by Texas Instruments

2N4440

Texas Instruments

2N4440 by Texas Instruments is a NPN RF BJT with 40V VCEO, 1.5A IC, and 400MHz fT. Ideal for high-frequency applications due to its metal package and 11W Ptot. Suitable for amplification in RF circuits requiring low hFE of 10.
AM81214-006 by STMicroelectronics

AM81214-006

STMicroelectronics

STMicroelectronics AM81214-006 is an NPN RF BJT transistor with a max power dissipation of 16.7W and min hFE of 15, ideal for L Band switching applications. It has a max IC of 0.82A, operates up to 250 °C, and comes in a ceramic-metal package with dual terminals for flange mount connection.
LLE18100X by NXP Semiconductors

LLE18100X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 15; Maximum Power Dissipation Ambient: 23 W;
MRFX035H-2MHZ by NXP Semiconductors

MRFX035H-2MHZ

NXP Semiconductors

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SD1448 by STMicroelectronics

SD1448

STMicroelectronics

SD1448 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 31.8W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
BLS2731-50TRAY by NXP Semiconductors

BLS2731-50TRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
BLU60/28 by NXP Semiconductors

BLU60/28

NXP Semiconductors

BLU60/28 by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 110W, operates up to 200 °C, and offers a min power gain of 7dB in the ultra-high frequency band. Its ceramic, metal-sealed package ensures reliability in demanding environments.
SD1729(TH416) by STMicroelectronics

SD1729(TH416)

STMicroelectronics

SD1729(TH416) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max collector current of 12 A, operates up to 200 °C, and supports voltages up to 35 V. Ideal for surface mount designs in communication systems.
SD4011 by STMicroelectronics

SD4011

STMicroelectronics

SD4011 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals and max power dissipation of 31.8W. Ideal for ultra high frequency band amplification applications, it has a max collector-emitter voltage of 20V and operates at up to 200 °C.
2SC892 by Renesas Electronics

2SC892

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 1.2 A; Maximum Operating Temperature: 175 Cel;
BLV37 by NXP Semiconductors

BLV37

NXP Semiconductors

BLV37 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290W, operates at very high frequencies, and offers a min power gain of 10.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
BLV2045N by NXP Semiconductors

BLV2045N

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;
MZ0912B100YTRAY by NXP Semiconductors

MZ0912B100YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Terminals: 2; Terminal Form: FLAT;
RF3L05150CB4 by STMicroelectronics

RF3L05150CB4

STMicroelectronics

RF Power Bipolar Transistors;
MSC81325M by STMicroelectronics

MSC81325M

STMicroelectronics

MSC81325M by STMicroelectronics is a NPN RF Power BJT with 24A IC, 880W power dissipation, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package body, single configuration, and flat terminal form. Operating at up to 200 °C, this transistor offers a min hFE of 15 and radial terminal position.
SD1898 by STMicroelectronics

SD1898

STMicroelectronics

SD1898 by STMicroelectronics is a NPN RF BJT transistor with 87.5W power dissipation, suitable for L Band applications. It has a max collector current of 7.8A and operates at up to 200 °C temperature, making it ideal for amplifier circuits in high-frequency settings. The package style is flange mount with a square shape and flat terminals, offering easy surface-mount integration.
TSD4575 by STMicroelectronics

TSD4575

STMicroelectronics

TSD4575 by STMicroelectronics is an NPN RF Power BJT with a max collector current of 0.2A, suitable for amplifier applications in the ultra-high frequency band. It features a ceramic and metal-sealed co-fired package body material, surface mount capability, and a rectangular package shape with flange mount style.