Renesas Electronics - ISL73127RHF/PROTO

  1. Home
  2. Renesas Electronics - ISL73127RHF/PROTO
ISL73127RHF/PROTO by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number ISL73127RHF/PROTO
Description RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;
Datasheet ISL73127RHF/PROTO Datasheet
NAME DESCRIPTION
Terminal Finish: GOLD
JESD-609 Code: e4
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

RO2731B20W by NXP Semiconductors

RO2731B20W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.7 A; Maximum Operating Temperature: 200 Cel;
2SC4001-K by Renesas Electronics

2SC4001-K

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BLU30/12 by NXP Semiconductors

BLU30/12

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 6 dB;
BFQ108 by NXP Semiconductors

BFQ108

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .3 A; Transistor Application: AMPLIFIER;
AM0912-300 by STMicroelectronics

AM0912-300

STMicroelectronics

AM0912-300 by STMicroelectronics is a NPN RF Power BJT with 7 dB min power gain, ideal for switching applications in L Band. It has a max power dissipation of 940 W and can handle up to 24 A collector current. The transistor is surface mountable and operates at temperatures up to 250 °C.
2SC2178 by Toshiba

2SC2178

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT;
MRB11350Y by NXP Semiconductors

MRB11350Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum Power Gain (Gp): 7 dB; No. of Elements: 1;
SD4100 by STMicroelectronics

SD4100

STMicroelectronics

SD4100 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 220 W and operating temp up to 200 °C. It supports ultra-high frequency bands with a collector current of 16 A. Its ceramic, metal-sealed package ensures durability in demanding environments.
2SC4001-M-AZ by Renesas Electronics

2SC4001-M-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
SD1728C by STMicroelectronics

SD1728C

STMicroelectronics

SD1728C by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications, it features a plastic/epoxy package, flat terminals, and operates up to 200 °C. Suitable for surface mount with flange mount style packaging.
5962F0721806VXC by Renesas Electronics

5962F0721806VXC

Renesas Electronics

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;
AM83135-005 by STMicroelectronics

AM83135-005

STMicroelectronics

STMicroelectronics AM83135-005 is a NPN RF BJT transistor with 5.2 dB min power gain, suitable for S Band applications. It has a max power dissipation of 40 W and can handle up to 1.8 A collector current, making it ideal for switching operations in high-frequency circuits.
AM80912-005 by STMicroelectronics

AM80912-005

STMicroelectronics

STMicroelectronics' AM80912-005 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 9.3 dB and can handle up to 25W of power dissipation. Ideal for L Band frequencies, this transistor has a max operating temperature of 250 °C and features a flange mount package style.
MRF422 by Asi Semiconductor

MRF422

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;
LV1721E50RTRAY by NXP Semiconductors

LV1721E50RTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Terminal Position: DUAL; Terminal Form: FLAT;
MRF454 by Asi Semiconductor

MRF454

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 40;
MZ0912B50Y by NXP Semiconductors

MZ0912B50Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;
AM80610-030 by STMicroelectronics

AM80610-030

STMicroelectronics

AM80610-030 by STMicroelectronics is an NPN RF power BJT designed for switching applications. It features a max power dissipation of 57W, operates at ultra-high frequencies, and withstands temperatures up to 200 °C. Ideal for high-performance electronic circuits.
BLV94 by NXP Semiconductors

BLV94

NXP Semiconductors

BLV94 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 6 dB, operates at ultra-high frequencies, and supports a max collector current of 3 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
MSC81350M by STMicroelectronics

MSC81350M

STMicroelectronics

STMicroelectronics' MSC81350M is an NPN BJT transistor for switching applications. With a max power dissipation of 720W, it operates in L Band frequency with 19.8A collector current. The ceramic-metal package and flange mount make it suitable for high-power RF amplifiers.