STMicroelectronics - MSC81005

SD1463 by STMicroelectronics is an NPN RF Power BJT with 30V VCE, 15A IC, and ultra-high frequency band. It is a single-configured transistor for amplifier applications in a plastic/epoxy package suitable for surface mount with 8 terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 31 W; Maximum Collector Current (IC): 2.25 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.7 W; Maximum Collector Current (IC): .75 A; Terminal Position: RADIAL;

STMicroelectronics' AM1011-075 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 9.2 dB, max power dissipation of 175W, and operates in the L Band frequency range. The package is ceramic-metal-sealed cofired with a square shape and flange mount style, suitable for surface mounting.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 950 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;

SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.

MSC1004M by STMicroelectronics is a NPN RF Power BJT with 18W power dissipation, suitable for amplifier applications in L Band frequencies. Featuring a single configuration, it has a max collector current of 0.65A and operates at temperatures up to 200 °C.

STMicroelectronics' MSC82003 is a NPN RF BJT with 2 terminals and 21.8W power dissipation. Ideal for L Band applications, it has a max operating temp of 200 °C and hFE of 15, making it suitable for amplifier circuits in various industries.

PZ2024B10U by NXP is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 27W, operates up to 200 °C, and supports S-band frequencies. Its ceramic, metal-sealed package ensures durability in demanding environments.

BLV101A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and supports up to 10 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 8;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;

STMicroelectronics' MSC81350M is an NPN BJT transistor for switching applications. With a max power dissipation of 720W, it operates in L Band frequency with 19.8A collector current. The ceramic-metal package and flange mount make it suitable for high-power RF amplifiers.

2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Terminal Form: FLAT; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Minimum DC Current Gain (hFE): 10; Package Shape: ROUND;

STMicroelectronics AM80814-025 is a NPN RF BJT transistor with 7 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75W and can handle up to 3.5A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal-sealed co-fired package body material.

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;