P-CHANNEL RF Power Field Effect Transistors (FET) 3
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- RF Power Field Effect Transistors (FET)
Manufacturers
-
Ampleon Netherlands B V
-
Broadcom
-
Freescale Semiconductor
-
Fujitsu
-
Gan Systems
-
IXYS Corporation
-
Infineon Technologies
-
Littelfuse
-
M/a-com Technology Solutions
-
Microchip Technology
-
Mitsubishi Electric
-
Motorola
-
NXP Semiconductors
-
Onsemi
-
Qorvo
-
Renesas Electronics
-
STMicroelectronics
-
Samsung
-
Sumitomo Electric Industries
-
TE Connectivity
-
Texas Instruments
-
Toshiba
-
Tt Electronics Plc
-
Wolfspeed
Polarity or Channel Type (1)
-
P-CHANNEL
-
N-CHANNEL
Configuration
-
COMMON SOURCE, 2 ELEMENTS
-
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
-
COMMON SOURCE, 3 ELEMENTS
-
COMPLEX
-
SEPARATE, 2 ELEMENTS
-
SINGLE
-
SINGLE WITH BUILT-IN DIODE
Surface Mount
-
NO
-
YES
Maximum Power Dissipation (Abs)
-
.079 W
-
.4 W
-
.795 W
-
1.6 W
-
10 W
-
100 W
-
105 W
-
1052 W
-
108 W
-
11.7 W
-
110 W
-
115 W
-
116 W
-
117 W
-
118 W
-
12.5 W
-
120 W
-
125 W
-
130 W
-
1300 W
-
1333 W
-
135 W
-
139 W
-
14 W
-
140 W
-
145 W
-
146 W
-
151 W
-
152 W
-
158 W
-
159 W
-
16 W
-
160 W
-
161 W
-
165 W
-
1670 W
-
17.8 W
-
170 W
-
173 W
-
175 W
-
177 W
-
18.8 W
-
180 W
-
182 W
-
184 W
-
186 W
-
19 W
-
19.5 W
-
190 W
-
196 W
-
197 W
-
2.5 W
-
20 W
-
20.5 W
-
20.8 W
-
200 W
-
211 W
-
216 W
-
217 W
-
218.8 W
-
219 W
-
220 W
-
223 W
-
224 W
-
227 W
-
230 W
-
236 W
-
25 W
-
250 W
-
252 W
-
26.6 W
-
26.7 W
-
261 W
-
265 W
-
266 W
-
269 W
-
270 W
-
273 W
-
278 W
-
289 W
-
29 W
-
290 W
-
292 W
-
294 W
-
298 W
-
3 W
-
3.1 W
-
300 W
-
302 W
-
307 W
-
31 W
-
31.2 W
-
31.7 W
-
31.8 W
-
315 W
-
317 W
-
318 W
-
324 W
-
330 W
-
335 W
-
336 W
-
343 W
-
35 W
-
350 W
-
357 W
-
36.5 W
-
372 W
-
38 W
-
38.9 W
-
380 W
-
388 W
-
389 W
-
39 W
-
398 W
-
4 W
-
40 W
-
407 W
-
417 W
-
427 W
-
43.75 W
-
437 W
-
437.5 W
-
438 W
-
44 W
-
448 W
-
449 W
-
45 W
-
473 W
-
476 W
-
48 W
-
486 W
-
498 W
-
5 W
-
500 W
-
52.8 W
-
530 W
-
565 W
-
58 W
-
59 W
-
6 W
-
603 W
-
61.4 W
-
62.5 W
-
625 W
-
643 W
-
647 W
-
648 W
-
65 W
-
68 W
-
690 W
-
7 W
-
700 W
-
73 W
-
74 W
-
75 W
-
761 W
-
79 W
-
79.5 W
-
795 W
-
8.3 W
-
800 W
-
83.3 W
-
86 W
-
87.5 W
-
9 W
-
92 W
-
93 W
-
95 W
Package Body Material
-
CERAMIC, METAL-SEALED COFIRED
-
METAL
-
PLASTIC/EPOXY
-
UNSPECIFIED
Transistor Application
-
AMPLIFIER
-
SWITCHING
Minimum DS Breakdown Voltage
-
10 V
-
100 V
-
1000 V
-
104 V
-
105 V
-
106 V
-
108 V
-
110 V
-
112 V
-
115 V
-
12 V
-
120 V
-
1200 V
-
125 V
-
130 V
-
133 V
-
14 V
-
15 V
-
150 V
-
16 V
-
160 V
-
17 V
-
170 V
-
177 V
-
179 V
-
19 V
-
20 V
-
200 V
-
25 V
-
250 V
-
28 V
-
3.8 V
-
30 V
-
36 V
-
4.2 V
-
40 V
-
5.5 V
-
50 V
-
500 V
-
6 V
-
60 V
-
65 V
-
650 V
-
66 V
-
68 V
-
7 V
-
70 V
-
75 V
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8 V
-
80 V
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84 V
-
89 V
-
9 V
-
90 V
Minimum Power Gain (Gp)
-
10 dB
-
10.5 dB
-
10.75 dB
-
11 dB
-
11.3 dB
-
11.5 dB
-
12 dB
-
12.5 dB
-
12.7 dB
-
12.9 dB
-
13 dB
-
13.3 dB
-
13.5 dB
-
14 dB
-
14.1 dB
-
14.2 dB
-
14.3 dB
-
14.5 dB
-
14.75 dB
-
14.9 dB
-
15 dB
-
15.5 dB
-
15.55 dB
-
15.75 dB
-
16 dB
-
16.2 dB
-
16.5 dB
-
16.7 dB
-
17 dB
-
17.4 dB
-
17.5 dB
-
17.6 dB
-
18 dB
-
18.5 dB
-
18.9 dB
-
19 dB
-
19.5 dB
-
20 dB
-
20.5 dB
-
21 dB
-
23 dB
-
23.5 dB
-
24 dB
-
24.5 dB
-
26.8 dB
-
5.5 dB
-
7.5 dB
-
8.5 dB
-
9 dB
-
9.5 dB
Terminal Form
-
C BEND
-
FLAT
-
GULL WING
-
NO LEAD
-
THROUGH-HOLE
-
UNSPECIFIED
-
WIRE
Package Shape
-
RECTANGULAR
-
ROUND
-
SQUARE
-
UNSPECIFIED
Operating Mode
-
DEPLETION MODE
-
DUAL GATE, DEPLETION MODE
-
ENHANCEMENT MODE
No. of Elements
-
1
-
2
-
3
Highest Frequency Band
-
C BAND
-
HIGH FREQUENCY BAND
-
K BAND
-
KA BAND
-
KU BAND
-
L BAND
-
S BAND
-
ULTRA HIGH FREQUENCY BAND
-
VERY HIGH FREQUENCY BAND
-
X BAND
Maximum Pulsed Drain Current (IDM)
-
72 A
Maximum Drain Current (Abs) (ID)
-
.00001 A
-
.2 A
-
.25 A
-
.3 A
-
.35 A
-
.4 A
-
.5 A
-
.6 A
-
.7 A
-
.75 A
-
.83 A
-
1 A
-
1.1 A
-
1.2 A
-
1.25 A
-
1.5 A
-
1.65 A
-
1.8 A
-
10 A
-
10.4 A
-
11 A
-
11.4 A
-
11.5 A
-
112 A
-
12 A
-
13 A
-
14 A
-
15 A
-
16 A
-
16.5 A
-
17 A
-
18 A
-
2 A
-
2.1 A
-
2.2 A
-
2.3 A
-
2.5 A
-
2.6 A
-
2.8 A
-
20 A
-
22 A
-
24 A
-
25 A
-
26 A
-
27 A
-
29 A
-
3 A
-
3.1 A
-
3.5 A
-
3.9 A
-
30 A
-
31 A
-
32 A
-
33 A
-
34 A
-
38 A
-
39 A
-
4 A
-
4.2 A
-
4.25 A
-
4.5 A
-
40 A
-
42 A
-
46 A
-
49 A
-
5 A
-
5.2 A
-
5.6 A
-
5.7 A
-
54 A
-
6 A
-
6.2 A
-
6.5 A
-
60 A
-
64 A
-
7 A
-
7.2 A
-
76 A
-
8 A
-
8.2 A
-
8.5 A
-
9 A
No. of Terminals
-
10
-
12
-
13
-
14
-
16
-
2
-
24
-
3
-
4
-
5
-
6
-
7
-
8
-
9
Package Style (Meter)
-
CHIP CARRIER
-
CYLINDRICAL
-
DIE
-
DISK BUTTON
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FLANGE MOUNT
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FLATPACK
-
IN-LINE
-
MICROWAVE
-
SMALL OUTLINE
-
UNCASED CHIP
Sub-Category
-
FET General Purpose Power
-
FET General Purpose Powers
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FET RF Small Signal
-
FET RF Small Signals
-
Other Transistors
Field Effect Transistor Technology
-
HETERO-JUNCTION
-
HIGH ELECTRON MOBILITY
-
JUNCTION
-
METAL SEMICONDUCTOR
-
METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
-
1.5 W
-
10 W
-
10.5 W
-
100 W
-
110 W
-
115 W
-
115.4 W
-
117 W
-
118 W
-
12 W
-
120 W
-
125 W
-
13 W
-
130 W
-
136 W
-
140 W
-
145 W
-
15 W
-
150 W
-
16 W
-
162.5 W
-
165 W
-
175 W
-
18 W
-
185 W
-
187 W
-
187.5 W
-
2.5 W
-
20 W
-
21.4 W
-
215 W
-
22 W
-
22.7 W
-
220 W
-
225 W
-
23 W
-
23.1 W
-
25 W
-
250 W
-
270 W
-
28.3 W
-
280 W
-
3 W
-
3.3 W
-
30 W
-
300 W
-
32.5 W
-
33 W
-
330 W
-
37.5 W
-
38 W
-
39.5 W
-
4 W
-
40.5 W
-
42.8 W
-
42.9 W
-
48 W
-
5 W
-
50 W
-
500 W
-
60 W
-
62.5 W
-
68 W
-
7.5 W
-
70 W
-
75 W
-
83.3 W
-
85 W
-
87.5 W
-
92 W
Maximum Operating Temperature
-
100 Cel
-
105 Cel
-
125 Cel
-
150 Cel
-
165 Cel
-
175 Cel
-
180 Cel
-
200 Cel
-
225 Cel
-
250 Cel
-
85 Cel
-
90 Cel
Transistor Element Material
-
GALLIUM ARSENIDE
-
GALLIUM NITRIDE
-
SILICON
-
SILICON CARBIDE
Minimum Operating Temperature
-
-20 Cel
-
-40 Cel
-
-55 Cel
Terminal Finish
-
GOLD
-
GOLD (10)
-
GOLD NICKEL
-
GOLD OVER NICKEL
-
Gold (Au)
-
Gold (Au) - with Nickel (Ni) barrier
-
Gold/Nickel (Au/Ni)
-
MATTE TIN
-
Matte Tin (Sn)
-
Matte Tin (Sn) - annealed
-
NICKEL GOLD
-
NICKEL PALLADIUM GOLD
-
Nickel/Gold (Ni/Au)
-
Nickel/Gold/Cobalt (Ni/Au/Co)
-
Nickel/Palladium/Gold (Ni/Pd/Au)
-
SILVER
-
TIN
-
TIN BISMUTH
-
TIN LEAD
-
TIN SILVER COPPER
-
Tin (Sn)
-
Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
-
.112 ohm
-
.15 ohm
-
.3 ohm
-
.35 ohm
-
.5 ohm
-
.6 ohm
-
.75 ohm
-
1.05 ohm
-
1.25 ohm
-
1.5 ohm
-
2.5 ohm
-
2.7 ohm
-
5 ohm
Maximum Drain Current (ID)
-
.00001 A
-
.2 A
-
.25 A
-
.3 A
-
.35 A
-
.4 A
-
.5 A
-
.6 A
-
.7 A
-
.75 A
-
.8 A
-
.9 A
-
.95 A
-
1 A
-
1.1 A
-
1.2 A
-
1.25 A
-
1.5 A
-
1.65 A
-
1.8 A
-
10 A
-
10.2 A
-
10.4 A
-
11 A
-
11.4 A
-
11.5 A
-
112 A
-
12 A
-
13 A
-
13.9 A
-
14 A
-
15 A
-
15.5 A
-
16 A
-
16.5 A
-
17 A
-
18 A
-
2 A
-
2.1 A
-
2.2 A
-
2.3 A
-
2.4 A
-
2.5 A
-
2.6 A
-
2.8 A
-
20 A
-
22 A
-
24 A
-
25 A
-
26 A
-
27 A
-
27.8 A
-
28 A
-
29 A
-
3 A
-
3.1 A
-
3.3 A
-
3.5 A
-
3.6 A
-
3.9 A
-
30 A
-
31 A
-
32 A
-
32.5 A
-
33 A
-
34 A
-
35 A
-
36 A
-
37 A
-
38 A
-
39 A
-
4 A
-
4.2 A
-
4.25 A
-
4.5 A
-
40 A
-
42 A
-
45 A
-
46 A
-
48 A
-
49 A
-
5 A
-
5.2 A
-
5.6 A
-
5.7 A
-
54 A
-
56 A
-
6 A
-
6.2 A
-
6.3 A
-
6.5 A
-
60 A
-
64 A
-
7 A
-
7.2 A
-
7.5 A
-
72 A
-
76 A
-
8 A
-
8.2 A
-
8.5 A
-
8.7 A
-
88 A
-
9 A
-
90 A
Terminal Position
-
BOTTOM
-
DUAL
-
QUAD
-
RADIAL
-
SINGLE
-
UNSPECIFIED
-
UPPER
JESD-30 Code
-
DIE-2
-
DIE-6
-
O-CRFM-F4
-
O-CXDB-F6
-
O-CXFM-F6
-
O-MBCY-W3
-
O-PRFM-F4
-
R-CDFM-F2
-
R-CDFM-F3
-
R-CDFM-F4
-
R-CDFM-F5
-
R-CDFM-F6
-
R-CDFM-F8
-
R-CDFM-G2
-
R-CDFM-G4
-
R-CDFP-F2
-
R-CDFP-F3
-
R-CDFP-F4
-
R-CDFP-F6
-
R-CDFP-F8
-
R-CDFP-X6
-
R-CDSO-F2
-
R-CDSO-G2
-
R-CDSO-G4
-
R-CDSO-G8
-
R-CDSO-N2
-
R-CQFM-F6
-
R-CQFM-F8
-
R-CQFM-X6
-
R-CQFP-F6
-
R-CQFP-F8
-
R-CQFP-X2
-
R-CQFP-X4
-
R-CQFP-X6
-
R-CQMW-F4
-
R-CQSO-X4
-
R-CQSO-X6
-
R-MDFM-F4
-
R-MDSO-G8
-
R-PBCC-N3
-
R-PBCC-N4
-
R-PDFM-C6
-
R-PDFM-C8
-
R-PDFM-F12
-
R-PDFM-F16
-
R-PDFM-F2
-
R-PDFM-F3
-
R-PDFM-F4
-
R-PDFM-F6
-
R-PDFM-F8
-
R-PDFM-G16
-
R-PDFM-G2
-
R-PDFM-G4
-
R-PDFP-F2
-
R-PDFP-F4
-
R-PDFP-F6
-
R-PDFP-F8
-
R-PDSO-F16
-
R-PDSO-F2
-
R-PDSO-F4
-
R-PDSO-F6
-
R-PDSO-F8
-
R-PDSO-G10
-
R-PDSO-G16
-
R-PDSO-G2
-
R-PDSO-G3
-
R-PDSO-G4
-
R-PDSO-G8
-
R-PDSO-N10
-
R-PDSO-N12
-
R-PDSO-N16
-
R-PDSO-N6
-
R-PDSO-N8
-
R-PQCC-N4
-
R-PQFP-F4
-
R-PQFP-F6
-
R-PQFP-X4
-
R-PQMW-F4
-
R-PQSO-F3
-
R-PQSO-F4
-
R-PQSO-N4
-
R-PSFM-T3
-
R-PSIP-T3
-
R-PSSO-F3
-
R-PSSO-F4
-
R-XBCC-N4
-
R-XBCC-N6
-
R-XDFM-F2
-
R-XDFM-F4
-
R-XDFP-F2
-
R-XDFP-F4
-
R-XDSO-G8
-
R-XQFP-F4
-
R-XQMW-F
-
R-XQMW-F4
-
R-XQSO-F4
-
R-XUUC-N
-
R-XUUC-N13
-
R-XUUC-N14
-
R-XUUC-N2
-
R-XUUC-N3
-
R-XUUC-N4
-
R-XUUC-N5
-
R-XUUC-N6
-
R-XUUC-N7
-
R-XUUC-N9
-
R-XXUC-N
-
S-CDFM-F2
-
S-CDFM-F4
-
S-CDFP-F2
-
S-CDSO-G2
-
S-CQCC-N12
-
S-CQCC-N16
-
S-CQFM-F6
-
S-CQFP-F6
-
S-CQMW-F4
-
S-PBCC-N24
-
S-PDSO-N10
-
S-PDSO-N2
-
S-PDSO-N3
-
S-PDSO-N6
-
S-PDSO-N8
-
S-PQCC-N12
-
S-PQCC-N5
-
S-PQSO-N4
-
S-XBCC-N3
-
S-XDSO-G2
-
S-XDSO-N2
-
S-XQCC-N16
-
X-CXMW-F4
Moisture Sensitivity Level (MSL)
-
1
-
2
-
3
-
6
-
NOT APPLICABLE
Case Connection
-
DRAIN
-
ISOLATED
-
SOURCE
Qualification
-
Not Qualified
Additional Features
-
AVALANCHE RATED
-
ESD PROTECTED
-
ESD PROTECTED, HIGH RELIABILITY
-
ESD PROTECTION
-
ESD PROTECTION, HIGH RELIABILITY
-
HGH RELIABILITY
-
HIGH EFFICIENCY
-
HIGH RELIABILITY
-
LOW NOISE
-
LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
-
MO-229
-
TO-247AD
-
TO-270
-
TO-270AA
-
TO-270BA
-
TO-270BB
-
TO-272
-
TO-272AA
-
TO-272BA
-
TO-39
JESD-609 Code
-
e0
-
e1
-
e3
-
e4
-
e6
Maximum Time At Peak Reflow Temperature (s)
-
10
-
20
-
30
-
40
-
NOT APPLICABLE
-
NOT SPECIFIED
Peak Reflow Temperature (C)
-
225
-
240
-
245
-
250
-
255
-
260
-
270
-
280
-
NOT APPLICABLE
-
NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
-
.13 pF
-
.15 pF
-
.186 pF
-
.2 pF
-
.26 pF
-
.3 pF
-
.4 pF
-
.46 pF
-
.53 pF
-
.6 pF
-
.7 pF
-
1 pF
-
1.04 pF
-
1.1 pF
-
1.16 pF
-
1.6 pF
-
10 pF
-
2 pF
-
2.43 pF
-
2.5 pF
-
2.8 pF
-
2.98 pF
-
21 pF
-
24 pF
-
25 pF
-
3 pF
-
3.3 pF
-
35 pF
-
40 pF
-
5.2 pF
-
65 pF
-
8 pF
Reference Standard
-
ESA-SCC-5614/008
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IEC-60134
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Package Body Material | Transistor Application | Minimum DS Breakdown Voltage | Minimum Power Gain (Gp) | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Minimum Operating Temperature | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Gan Systems |
P-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
SWITCHING |
650 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
GOLD OVER NICKEL |
60 A |
BOTTOM |
R-XBCC-N6 |
3 |
SOURCE |
e4 |
30 |
260 |
|||||||||||||||
|
|
Qorvo |
P-CHANNEL |
SINGLE |
YES |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
C BAND |
2 |
FLATPACK |
HIGH ELECTRON MOBILITY |
GALLIUM NITRIDE |
5 A |
DUAL |
R-CDFP-F2 |
SOURCE |
30 |
260 |
|||||||||||||||||||
|
|
Littelfuse |
P-CHANNEL |
SINGLE |
YES |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
8 V |
NO LEAD |
SQUARE |
DEPLETION MODE |
1 |
S BAND |
16 |
CHIP CARRIER |
METAL SEMICONDUCTOR |
GALLIUM ARSENIDE |
TIN |
.4 A |
QUAD |
S-CQCC-N16 |
3 |
Not Qualified |
e3 |
RF Power Field Effect Transistors (FET)
RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.
RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.
The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.