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| Manufacturer | Gan Systems |
|---|---|
| Manufacturer's Part Number | GS66516B-MR |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): CHIP CARRIER; |
| Datasheet | GS66516B-MR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 60 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | GOLD OVER NICKEL |
| JESD-609 Code: | e4 |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 650 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-XBCC-N6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 3 |
