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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | AFT09MP055GNR1 |
Description | N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; |
Datasheet | AFT09MP055GNR1 Datasheet |
In Stock | 2,238 |
NAME | DESCRIPTION |
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Maximum Power Dissipation (Abs): | 625 W |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Operating Temperature: | 150 Cel |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | 260 |
Polarity or Channel Type: | N-CHANNEL |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
Moisture Sensitivity Level (MSL): | 3 |