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| Manufacturer | Freescale Semiconductor |
|---|---|
| Manufacturer's Part Number | MRF6S20010GNR1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; |
| Datasheet | MRF6S20010GNR1 Datasheet |
| In Stock | 1,857 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PDFM-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |
| Other Names: |
MRF6S20010GNR1CT 935313674528 MRF6S20010GNR1-ND MRF6S20010GNR1TR MRF6S20010GNR1DKR |
| JEDEC-95 Code: | TO-270BA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 68 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |








