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Manufacturer | New Jersey Semiconductor Products |
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Manufacturer's Part Number | BLF246 |
Description | N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; |
Datasheet | BLF246 Datasheet |
In Stock | 862 |
NAME | DESCRIPTION |
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Minimum DS Breakdown Voltage: | 65 V |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Maximum Drain Current (ID): | 13 A |
Polarity or Channel Type: | N-CHANNEL |