NXP Semiconductors - MRF1K50HR5

  1. Home
  2. NXP Semiconductors - MRF1K50HR5
MRF1K50HR5 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF1K50HR5
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet MRF1K50HR5 Datasheet
In Stock4,881
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,881 $188.230 $918,750.630

Popular Products

Category Top Products

BLF177 by Asi Semiconductor

BLF177

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
934065125112 by NXP Semiconductors

934065125112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON;
PTVA101K02EVP1 by Wolfspeed

PTVA101K02EVP1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
A2T21H450W19SR6 by NXP Semiconductors

A2T21H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A3G18D510-04SR3 by NXP Semiconductors

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;
934061173112 by NXP Semiconductors

934061173112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF640U by Ampleon Netherlands B V

BLF640U

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF147 by P1db

BLF147

P1db

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: O-CRFM-F4; Operating Mode: ENHANCEMENT MODE;
A2T18S261W12NR3 by NXP Semiconductors

A2T18S261W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
LET9045F by STMicroelectronics

LET9045F

STMicroelectronics

LET9045F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its flatpack design ensures efficient surface mounting.
LET9070FB by STMicroelectronics

LET9070FB

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PTVA101K02EVV1R250XTMA1 by Wolfspeed

PTVA101K02EVV1R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;
PD57018 by STMicroelectronics

PD57018

STMicroelectronics

STMicroelectronics PD57018 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2.5A and can handle up to 31.7W power dissipation at 165 °C operating temperature.
MRF141G by New Jersey Semiconductor Products

MRF141G

New Jersey Semiconductor Products

N-CHANNEL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 32 A;
AFM907N by NXP Semiconductors

AFM907N

NXP Semiconductors

RF Power Field-Effect Transistors;
BLF861 by NXP Semiconductors

BLF861

NXP Semiconductors

BLF861 by NXP is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features COMMON SOURCE configuration, 18A ID, and METAL-OXIDE SEMICONDUCTOR technology in a CERAMIC package with FLANGE MOUNT style.
MRFE6VP100HSR5 by NXP Semiconductors

MRFE6VP100HSR5

NXP Semiconductors

N-CHANNEL; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TIM5359-45SL by Toshiba

TIM5359-45SL

Toshiba

Toshiba's TIM5359-45SL is an N-channel RF Power FET with a 15V DS breakdown voltage and 31A drain current. Ideal for C-band applications, it operates in depletion mode with a max power dissipation of 125W at 175°C. The ceramic-metal sealed co-fired package ensures reliable performance in high-frequency environments.
ST24180 by STMicroelectronics

ST24180

STMicroelectronics

RF Power Field-Effect Transistors;
LET20045C by STMicroelectronics

LET20045C

STMicroelectronics

LET20045C by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in L BAND frequency range. With 12A Drain Current and 130W Power Dissipation, it's a high-performance transistor suitable for various RF power amplification needs.