New Jersey Semiconductor Products - BLF278

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BLF278 by New Jersey Semiconductor Products

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Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number BLF278
Description N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 18 A; No. of Elements: 2; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Datasheet BLF278 Datasheet
In Stock7,892
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 125 V
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 2
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Drain Current (ID): 18 A
Polarity or Channel Type: N-CHANNEL
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