VRF151G by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	VRF151G
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
Datasheet	VRF151G Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	36 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	4
Maximum Power Dissipation (Abs):	500 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	170 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	40 A

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