NXP Semiconductors - MRF300BN

  1. Home
  2. NXP Semiconductors - MRF300BN
MRF300BN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF300BN
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet MRF300BN Datasheet
In Stock171
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
171 - -

Popular Products

Category Top Products

STAC4932B by STMicroelectronics

STAC4932B

STMicroelectronics

STAC4932B by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min DS breakdown voltage, operates in the ultra-high frequency band, and supports surface mount with a max temp of 200 °C. Ideal for high-performance RF circuits.
BLF888D by NXP Semiconductors

BLF888D

NXP Semiconductors

RF Power Field-Effect Transistors;
934061137112 by NXP Semiconductors

934061137112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Highest Frequency Band: S BAND; Maximum Drain Current (ID): 8.2 A;
934065317112 by NXP Semiconductors

934065317112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL; Case Connection: SOURCE;
PTVA101K02EVP1 by Wolfspeed

PTVA101K02EVP1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF6V10010NR4 by NXP Semiconductors

MRF6V10010NR4

NXP Semiconductors

NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.
A2T18H160-24SR3 by NXP Semiconductors

A2T18H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
SD2933W by STMicroelectronics

SD2933W

STMicroelectronics

SD2933W by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 648W. It operates at up to 200 °C, making it suitable for high-power applications in surface-mount configurations.
934064588112 by NXP Semiconductors

934064588112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
MMRF1014NT1 by NXP Semiconductors

MMRF1014NT1

NXP Semiconductors

The NXP Semiconductors MMRF1014NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with highest frequency band L BAND. This transistor features a PLASTIC/EPOXY package, NO LEAD terminals, and METAL-OXIDE SEMICONDUCTOR technology.
MRF151A by M/a-com Technology Solutions

MRF151A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;
934066857112 by NXP Semiconductors

934066857112

NXP Semiconductors

NXP Semiconductors' 934066857112 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for SWITCHING applications in L BAND frequency range. The transistor is METAL-OXIDE SEMICONDUCTOR technology based and comes in a FLATPACK package style for surface mount installation.
BLF6G15LS-40RN by NXP Semiconductors

BLF6G15LS-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
AFG24S100H by NXP Semiconductors

AFG24S100H

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
PD54008S-E-E by STMicroelectronics

PD54008S-E-E

STMicroelectronics

PD54008S-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
MRF300AN-230MHZ by NXP Semiconductors

MRF300AN-230MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934064628118 by NXP Semiconductors

934064628118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2;
934065232112 by NXP Semiconductors

934065232112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Shape: RECTANGULAR; Case Connection: SOURCE;
CGH40045F by Wolfspeed

CGH40045F

Wolfspeed

CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
AFM907NT1 by NXP Semiconductors

AFM907NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;