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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | BLF3G21-30,112 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER; |
Datasheet | BLF3G21-30,112 Datasheet |
In Stock | 1,048 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 4.5 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 2 |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-CDFM-F2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | SOURCE |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 65 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 4.5 A |