A2T14H450-23NR6 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	A2T14H450-23NR6
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
Datasheet	A2T14H450-23NR6 Datasheet
In Stock	392

NAME	DESCRIPTION
Minimum Power Gain (Gp):	17 dB
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PQFP-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	225 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	3

Pricing (USD)

Qty.	Unit Price	Ext. Price
392	-	-

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;