Renesas Electronics - NE5550779A-T1-A

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NE5550779A-T1-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE5550779A-T1-A
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NE5550779A-T1-A Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 17.8 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.1 A
Maximum Drain Current (Abs) (ID): 2.1 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
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