NE5550779A-T1-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE5550779A-T1-A
Description	N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	NE5550779A-T1-A Datasheet

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	17.8 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	2.1 A
Maximum Drain Current (Abs) (ID):	2.1 A
Sub-Category:	FET General Purpose Powers
Polarity or Channel Type:	N-CHANNEL

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