NXP Semiconductors - A3G26H502W17SR3

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A3G26H502W17SR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number A3G26H502W17SR3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; JESD-30 Code: R-CQFP-F6;
Datasheet A3G26H502W17SR3 Datasheet
In Stock72
NAME DESCRIPTION
Minimum Power Gain (Gp): 11.3 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 150 V
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-CQFP-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
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