650 MHz RF Small Signal Bipolar Junction Transistors (BJT) 96

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Manufacturers
    • Broadcom
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fairchild Semiconductor
    • Infineon Technologies
    • Intersil
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Skyworks Solutions
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Telefunken
Polarity or Channel Type
    • N-CHANNEL
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SERIES, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT) (1)
    • 650 MHz
    • .75 MHz
    • 1.6 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 10500 MHz
    • 10600 MHz
    • 10800 MHz
    • 11.2 MHz
    • 11.5 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 110000 MHz
    • 1150 MHz
    • 11500 MHz
    • 12.5 MHz
    • 1200 MHz
    • 12000 MHz
    • 12500 MHz
    • 12600 MHz
    • 1300 MHz
    • 13000 MHz
    • 1350 MHz
    • 13500 MHz
    • 1400 MHz
    • 14000 MHz
    • 14500 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 15500 MHz
    • 16 MHz
    • 1600 MHz
    • 16000 MHz
    • 16500 MHz
    • 1700 MHz
    • 17000 MHz
    • 17500 MHz
    • 1800 MHz
    • 18000 MHz
    • 1900 MHz
    • 19000 MHz
    • 2 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 2100 MHz
    • 21000 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 2300 MHz
    • 23000 MHz
    • 2400 MHz
    • 24000 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 25000 MHz
    • 260 MHz
    • 26000 MHz
    • 26500 MHz
    • 27500 MHz
    • 2800 MHz
    • 28000 MHz
    • 28500 MHz
    • 2900 MHz
    • 29000 MHz
    • 3.5 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 3200 MHz
    • 32500 MHz
    • 34000 MHz
    • 350 MHz
    • 3500 MHz
    • 35000 MHz
    • 3600 MHz
    • 36000 MHz
    • 361 MHz
    • 3700 MHz
    • 37000 MHz
    • 3800 MHz
    • 38000 MHz
    • 390 MHz
    • 39000 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 40000 MHz
    • 41000 MHz
    • 4200 MHz
    • 42000 MHz
    • 4300 MHz
    • 43000 MHz
    • 440 MHz
    • 4400 MHz
    • 44000 MHz
    • 450 MHz
    • 4500 MHz
    • 45000 MHz
    • 46000 MHz
    • 470 MHz
    • 47000 MHz
    • 490 MHz
    • 500 MHz
    • 5000 MHz
    • 510 MHz
    • 53000 MHz
    • 550 MHz
    • 5500 MHz
    • 55000 MHz
    • 560 MHz
    • 5800 MHz
    • 6.5 MHz
    • 600 MHz
    • 6000 MHz
    • 60000 MHz
    • 620 MHz
    • 6500 MHz
    • 65000 MHz
    • 6700 MHz
    • 690 MHz
    • 700 MHz
    • 7000 MHz
    • 70000 MHz
    • 7200 MHz
    • 7300 MHz
    • 750 MHz
    • 7500 MHz
    • 75000 MHz
    • 7700 MHz
    • 7800 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 80000 MHz
    • 850 MHz
    • 8500 MHz
    • 85000 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 90000 MHz
    • 940 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .016 W
    • .03 W
    • .032 W
    • .035 W
    • .039 W
    • .04 W
    • .045 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .08 W
    • .085 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .136 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .175 W
    • .18 W
    • .185 W
    • .188 W
    • .19 W
    • .197 W
    • .2 W
    • .202 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .234 W
    • .24 W
    • .25 W
    • .273 W
    • .28 W
    • .29 W
    • .295 W
    • .3 W
    • .33 W
    • .333 W
    • .35 W
    • .36 W
    • .365 W
    • .37 W
    • .38 W
    • .4 W
    • .41 W
    • .45 W
    • .48 W
    • .5 W
    • .58 W
    • .6 W
    • .625 W
    • .64 W
    • .65 W
    • .67 W
    • .69 W
    • .7 W
    • .735 W
    • .75 W
    • .8 W
    • .886 W
    • .9 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 1.7 W
    • 1.8 W
    • 1.9 W
    • 12 W
    • 150 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 4.9 W
    • 5 W
    • 6 W
    • 6.3 W
    • 7 W
    • 70 W
    • 8 W
    • 8.3 W
    • 8.75 W
    • 8.8 W
    • 80 W
    • 85 W
Maximum Collector Current (IC)
    • .00009 A
    • .0001 A
    • .0002 A
    • .0004 A
    • .0005 A
    • .002 A
    • .0036 A
    • .004 A
    • .005 A
    • .006 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .0113 A
    • .012 A
    • .015 A
    • .016 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .026 A
    • .03 A
    • .032 A
    • .035 A
    • .036 A
    • .037 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .15 A
    • .2 A
    • .21 A
    • .23 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .4 A
    • .425 A
    • .5 A
    • .6 A
    • .64 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • 1 A
    • 1.1 A
    • 1.25 A
    • 10 A
    • 120 A
    • 3 A
    • 6 A
    • 7 A
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .2 V
    • .25 V
    • .3 V
    • .4 V
    • .45 V
    • .5 V
    • .6 V
    • 1 V
    • 1.6 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.9 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 15 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 19.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 28 dB
    • 29 dB
    • 30 dB
    • 6 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 9 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
No. of Terminals
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP General Purpose Small Signal
    • BIP RF Small Signal
    • BIP RF Small Signals
    • Other Transistors
Maximum Power Dissipation Ambient
    • .016 W
    • .03 W
    • .032 W
    • .05 W
    • .054 W
    • .1 W
    • .12 W
    • .125 W
    • .135 W
    • .14 W
    • .15 W
    • .188 W
    • .2 W
    • .225 W
    • .227 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .35 W
    • .375 W
    • .4 W
    • .45 W
    • .48 W
    • .5 W
    • .65 W
    • .7 W
    • .75 W
    • .8 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 12 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 2.9 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 5 W
    • 6 W
    • 7.2 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 110
    • 120
    • 125
    • 130
    • 132
    • 135
    • 140
    • 15
    • 150
    • 155
    • 160
    • 170
    • 18
    • 20
    • 200
    • 205
    • 220
    • 235
    • 25
    • 250
    • 27
    • 270
    • 28
    • 29
    • 30
    • 300
    • 35
    • 39
    • 40
    • 400
    • 45
    • 48
    • 5
    • 50
    • 54
    • 55
    • 56
    • 60
    • 65
    • 67
    • 70
    • 72
    • 75
    • 80
    • 82
    • 85
    • 90
    • 95
    • 97
Maximum Operating Temperature
    • 125 Cel
    • 128 Cel
    • 135 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 85 Cel
Maximum Collector-Base Capacitance
    • .01 pF
    • .08 pF
    • .084 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .2 pF
    • .22 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .29 pF
    • .3 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .44 pF
    • .45 pF
    • .46 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .54 pF
    • .55 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .67 pF
    • .7 pF
    • .72 pF
    • .74 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .95 pF
    • 1 pF
    • 1.05 pF
    • 1.1 pF
    • 1.15 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.35 pF
    • 1.4 pF
    • 1.45 pF
    • 1.5 pF
    • 1.55 pF
    • 1.6 pF
    • 1.7 pF
    • 1.8 pF
    • 1.85 pF
    • 1.9 pF
    • 10 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.75 pF
    • 2.9 pF
    • 20 pF
    • 3 pF
    • 3.2 pF
    • 3.5 pF
    • 300 pF
    • 4 pF
    • 4.2 pF
    • 4.3 pF
    • 4.5 pF
    • 4.7 pF
    • 5 pF
    • 5.23 pF
    • 6 pF
    • 6.5 pF
    • 7 pF
    • 8 pF
    • 9 pF
Transistor Element Material
    • GALLIUM ARSENIDE
    • SILICON
    • SILICON GERMANIUM
    • SILICON GERMANIUM CARBON
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 11 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 19 V
    • 2.25 V
    • 2.3 V
    • 2.5 V
    • 2.8 V
    • 20 V
    • 23 V
    • 25 V
    • 27 V
    • 28 V
    • 3 V
    • 3.3 V
    • 3.5 V
    • 30 V
    • 33 V
    • 35 V
    • 36 V
    • 4 V
    • 4.1 V
    • 4.2 V
    • 4.3 V
    • 4.5 V
    • 40 V
    • 45 V
    • 48 V
    • 5 V
    • 5.3 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.1 V
    • 6.5 V
    • 60 V
    • 65 V
    • 7 V
    • 7.2 V
    • 8 V
    • 80 V
    • 9 V
    • 9.2 V
    • 9.5 V
    • 90 V
    • 95 V
Maximum Turn On Time (ton)
    • 12 ns
    • 15 ns
    • 20 ns
    • 35 ns
    • 38 ns
    • 45 ns
    • 60 ns
    • 70 ns
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
    • 150 Cel
Maximum Turn Off Time (toff)
    • 100 ns
    • 18 ns
    • 190 ns
    • 20 ns
    • 285 ns
    • 30 ns
    • 300 ns
    • 35 ns
    • 40 ns
    • 75 ns
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/TIN BISMUTH
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN OVER COPPER
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Bismuth (Sn98Bi2)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRMW-F4
    • O-CRPM-F3
    • O-CRPM-F4
    • O-CXFM-F2
    • O-CXMW-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBCY-W6
    • O-MRDB-F4
    • O-MUPM-P3
    • O-PBCY-P3
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F3
    • O-PRDB-F4
    • O-PRDB-G4
    • O-PRFM-F2
    • O-PRPM-F4
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDFM-F2
    • R-CDFP-F16
    • R-CDIP-T16
    • R-CDSO-G8
    • R-CDSO-N3
    • R-GDIP-T16
    • R-MDFM-F2
    • R-PBCC-N3
    • R-PBCY-T3
    • R-PDFP-F3
    • R-PDFP-F4
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G14
    • R-PDSO-G16
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-G3
    • R-PSSO-G4
    • R-XBCC-N3
    • R-XBCC-N6
    • R-XBCC-N7
    • R-XDFM-F6
    • R-XUUC-N16
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • S-CDMW-F6
    • S-CQMW-F4
    • S-CTMW-F5
    • S-CXMW-F4
    • S-PBCC-N7
    • S-PQCC-N16
    • S-PQSO-N8
    • S-XBCC-N7
    • S-XUUC-N2
    • S-XUUC-N3
    • X-CQMW-F4
    • X-CXMW-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
    • SHIELD
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • BUILT-IN EMITTER BALLASTING RESISTORS
    • ESD PROTECTED, LOW NOISE
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED BALLAST RESISTORS
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, LOW NOISE
    • HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY; WITH EMITTER BALLASTING RESISTOR
    • HIGH SPEED SATURATED SWITCHING
    • HIGH VOLTAGE, HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
    • LOW NOISE, TR7:3
    • TR, 7 INCH: 3000
    • TUNER
    • WITH EMITTER BALLASTING RESISTORS
    • WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY
JEDEC-95 Code
    • MO-252
    • MS-001AA
    • MS-001BB
    • MS-012AA
    • MS-012AB
    • MS-012AC
    • TO-117
    • TO-12
    • TO-126
    • TO-18
    • TO-202
    • TO-205AD
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-236AF
    • TO-243
    • TO-243AA
    • TO-253AA
    • TO-33
    • TO-39
    • TO-46
    • TO-60
    • TO-72
    • TO-78
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e6
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 235
    • 240
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • AEC-Q101; IEC-60134
    • CECC
    • ESA-SCC-5611/006
    • ESA-SCC-5611/008
    • EUROPEAN SPACE AGENCY
    • IEC-134
    • IEC-60134
    • MIL-19500
    • MIL-19500/301H
    • MIL-19500/343F
    • MIL-19500/398
    • MIL-19500/426
    • MIL-38535
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

PMBTH10T/R

NXP Semiconductors

NPN

SINGLE

YES

650 MHz

.04 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.4 W

60

150 Cel

.65 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

CECC

MPSH10AMO

NXP Semiconductors

NPN

SINGLE

NO

650 MHz

.04 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

.65 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MPSH10-T/R

NXP Semiconductors

NPN

SINGLE

NO

650 MHz

.04 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

1 W

60

150 Cel

.65 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

CECC

MPSH10-AMMO

NXP Semiconductors

NPN

SINGLE

NO

650 MHz

.04 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PMBTH10

NXP Semiconductors

NPN

SINGLE

YES

650 MHz

.04 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.4 W

60

150 Cel

.65 pF

SILICON

25 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

e3

CECC

BF660TRL

NXP Semiconductors

PNP

SINGLE

YES

650 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

TUNER

BF660

NXP Semiconductors

PNP

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

30

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

PMBTH10-T

NXP Semiconductors

NPN

SINGLE

YES

650 MHz

.04 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.4 W

60

150 Cel

.65 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

CECC

UFMMTH10TC

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

UFMMTH10TA

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

MPSH10M1TC

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.65 pF

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

FMMTH10

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.33 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.33 W

60

150 Cel

.7 pF

SILICON

25 V

-55 Cel

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

MPSH10Q

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MPSH10PSTZ

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MPSH10STOA

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

MPSH10PSMTC

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.65 pF

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

MPSH10PSMTA

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.65 pF

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

MPSH10M1TA

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.65 pF

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

MPSH10P

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

LOW NOISE

MPSH10L

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MPSH10K

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MPSH10STZ

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

MPSH10STOB

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

MPSH10PSTOA

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MPSH10PSM

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.65 pF

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

UFMMTH10

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

MPSH10PSTOB

Diodes Incorporated

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

IN-LINE

.65 pF

SILICON

25 V

SINGLE

R-PSIP-W3

Not Qualified

MMBTH10-13

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

.7 pF

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

MMBTH10-7

Diodes Incorporated

NPN

SINGLE

YES

650 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SC2349

Toshiba

NPN

SINGLE

NO

650 MHz

.25 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

20

125 Cel

1.5 pF

SILICON

15 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SC3122

Toshiba

NPN

SINGLE

YES

650 MHz

.15 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

125 Cel

.45 pF

SILICON

30 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC2347

Toshiba

NPN

SINGLE

NO

650 MHz

.25 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

20

125 Cel

1.5 pF

SILICON

15 V

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SC3122TE85R

Toshiba

NPN

SINGLE

YES

650 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

60

125 Cel

.45 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236

2SC2347TPE2

Toshiba

NPN

SINGLE

NO

650 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

20

125 Cel

1.5 pF

SILICON

15 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SC3122TE85L

Toshiba

NPN

SINGLE

YES

650 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

60

125 Cel

.45 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236

2SC2349TPE2

Toshiba

NPN

SINGLE

NO

650 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

20

125 Cel

1.5 pF

SILICON

15 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC2348TPE2

Toshiba

NPN

SINGLE

NO

650 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

20

125 Cel

.4 pF

SILICON

30 V

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

2SC4249TE85R

Toshiba

NPN

SINGLE

YES

650 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

60

125 Cel

.5 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

2SC4249TE85L

Toshiba

NPN

SINGLE

YES

650 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

60

125 Cel

.5 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

2SC4249

Toshiba

NPN

SINGLE

YES

650 MHz

.1 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

20 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

125 Cel

.5 pF

SILICON

30 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

KST10TR

Samsung

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

KST10

Samsung

NPN

SINGLE

YES

650 MHz

.35 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

KST10TF

Samsung

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

KS10

Samsung

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

.7 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KST10TI

Samsung

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

KSP11

Samsung

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

AMPLIFIER

.5 V

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

1 W

60

150 Cel

.7 pF

SILICON

25 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

KS11

Samsung

NPN

SINGLE

NO

650 MHz

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

.7 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MMBTH10-T1

Samsung

NPN

SINGLE

YES

650 MHz

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

60

.7 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.