STMicroelectronics RF Small Signal Field Effect Transistors (FET) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
PD84001	STMicroelectronics	N-CHANNEL	SINGLE	YES	6 W	PLASTIC/EPOXY	AMPLIFIER	18 V	13 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	1.5 A	DUAL	R-PDSO-F4	1	SOURCE	Not Qualified			e3	30	260
STD6N10LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	PLASTIC/EPOXY	SWITCHING	100 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3			60 pF
PD57002	STMicroelectronics	N-CHANNEL	SINGLE	YES	4.75 W	PLASTIC/EPOXY	AMPLIFIER	65 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	TIN LEAD	.25 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
STAC9200	STMicroelectronics																															NOT SPECIFIED	NOT SPECIFIED
PD57002-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	4.75 W	PLASTIC/EPOXY	AMPLIFIER	65 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	Matte Tin (Sn) - annealed	.25 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD57002S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	4.75 W	PLASTIC/EPOXY	AMPLIFIER	65 V	15 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		.25 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
STAC150V2-350E	STMicroelectronics																															NOT SPECIFIED	NOT SPECIFIED
PD57002S	STMicroelectronics	N-CHANNEL	SINGLE	YES	4.75 W	PLASTIC/EPOXY	AMPLIFIER	65 V	15 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	TIN LEAD	.25 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
STD6N10L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	100 V		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	Tin/Lead (Sn/Pb)	6 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251	e0			60 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.