.07 A Small Signal Bipolar Junction Transistors (BJT) 154

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR149L3

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR198WE6327

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

190 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

260

BCR198F-E6433

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

BCR08PNH6433XTMA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO 1

BCR148E6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

260

BCR198E6433HTMA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

190 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR199F-E6433

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR199T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR196F

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

BCR199L3E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR148WE6433

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR198L3E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

BCR196-E6433

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

BCR149T-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR148T

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR198WE6327HTSA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

190 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

40

260

BCR196T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 0.47

e3

BCR146W-E6433

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

BCR146L3E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR196W-E6433

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

BCR146

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e3

NOT SPECIFIED

NOT SPECIFIED

BCR149F

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR198T-E6433

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

BCR148L3

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.07 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

70

SILICON

50 V

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

BCR146E6433

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.2 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

BCR199FL3

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR146E6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.2 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

260

BCR148E6433HTMA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR149L3E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR146F-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR196W

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e3

NOT SPECIFIED

NOT SPECIFIED

BCR148S-E6327

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

260

BCR149T-E6433

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR198F-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

1

260

BCR198S-E6433

Infineon Technologies

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

190 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR196-E6327

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.2 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

260

BCR146L3

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

50

SILICON

50 V

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

BCR198WE6433

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

190 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR199L3

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.07 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

120

SILICON

50 V

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

BCR199T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR199F

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR149F-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR149F-E6433

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR146E6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.468

e3

BCR148E6433

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR196T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR146T-E6433

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR148U

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

70

150 Cel

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395