.3 A Small Signal Bipolar Junction Transistors (BJT) 833

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N997

Texas Instruments

NPN

DARLINGTON

NO

.5 W

.3 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

4000

175 Cel

SILICON

40 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N2396

Texas Instruments

NPN

SINGLE

YES

50 MHz

.45 W

.3 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

ROUND

1

3

DISK BUTTON

Other Transistors

40

175 Cel

SILICON

40 V

RADIAL

O-CRDB-F3

ISOLATED

Not Qualified

TO-50

NOT SPECIFIED

NOT SPECIFIED

2N2395

Texas Instruments

NPN

SINGLE

YES

40 MHz

.45 W

.3 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

ROUND

1

3

DISK BUTTON

Other Transistors

20

175 Cel

SILICON

40 V

RADIAL

O-CRDB-F3

ISOLATED

Not Qualified

TO-50

NOT SPECIFIED

NOT SPECIFIED

2N1994

Texas Instruments

NPN

NO

.15 W

.3 A

1

BIP General Purpose Small Signal

15

GERMANIUM

2N2393

Texas Instruments

PNP

SINGLE

YES

50 MHz

.45 W

.3 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

ROUND

1

3

DISK BUTTON

Other Transistors

20

175 Cel

SILICON

35 V

RADIAL

O-CRDB-F3

ISOLATED

Not Qualified

TO-50

NOT SPECIFIED

NOT SPECIFIED

2N1995

Texas Instruments

NPN

NO

.15 W

.3 A

1

BIP General Purpose Small Signal

25

GERMANIUM

2N1996

Texas Instruments

NPN

NO

.15 W

.3 A

1

BIP General Purpose Small Signal

35

GERMANIUM

2N1303

Texas Instruments

PNP

SINGLE

NO

3 MHz

.15 W

.3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

85 Cel

GERMANIUM

BOTTOM

O-MBCY-W3

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N1305

Texas Instruments

PNP

SINGLE

NO

5 MHz

.15 W

.3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

85 Cel

GERMANIUM

BOTTOM

O-MBCY-W3

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N1309

Texas Instruments

PNP

SINGLE

NO

15 MHz

.15 W

.3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

80

85 Cel

GERMANIUM

BOTTOM

O-MBCY-W3

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N1307

Texas Instruments

PNP

SINGLE

NO

10 MHz

.15 W

.3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

85 Cel

GERMANIUM

BOTTOM

O-MBCY-W3

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N1306

Texas Instruments

NPN

SINGLE

NO

10 MHz

.15 W

.3 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

85 Cel

GERMANIUM

BOTTOM

O-MBCY-W3

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

BF844RLRE

Onsemi

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

20

150 Cel

SILICON

400 V

600 ns

10000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BC449ARLRA

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KSP94BU

Onsemi

PNP

SINGLE

NO

.625 W

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC449A

Onsemi

NPN

SINGLE

NO

200 MHz

.625 W

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

100 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e0

235

MPSA44

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

MPS3646RLRAG

Onsemi

NPN

SINGLE

NO

350 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BC449ARL

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

BC447G

Onsemi

NPN

SINGLE

NO

200 MHz

1.5 W

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

80 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

KST14

Onsemi

NPN

DARLINGTON

YES

125 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20000

150 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

BC447RL

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

BC447RLRP

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MPS3646RL

Onsemi

NPN

SINGLE

NO

350 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPSA44RL1

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

BC449G

Onsemi

NPN

SINGLE

NO

200 MHz

1.5 W

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

100 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

BC449RL1

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

KST13

Onsemi

NPN

DARLINGTON

YES

125 MHz

.35 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

1.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

MPS3646RL1

Onsemi

NPN

SINGLE

NO

350 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPS3646

Onsemi

NPN

SINGLE

NO

350 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

15 V

18 ns

28 ns

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

MPS3646RLRP

Onsemi

NPN

SINGLE

NO

350 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPS3646G

Onsemi

NPN

SINGLE

NO

350 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BC449ZL1

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

MPS-DO4

Onsemi

NPN

DARLINGTON

NO

.3 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

1000

SILICON

25 V

BOTTOM

O-PBCY-W3

TO-92

PN3646

Onsemi

NPN

SINGLE

NO

.35 W

.3 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.35 W

15

150 Cel

5 pF

SILICON

15 V

18 ns

-55 Cel

28 ns

BOTTOM

O-PBCY-T3

TO-92

BC449ARLRE

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BC449ARL1

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

BF844RL1

Onsemi

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

20

150 Cel

SILICON

400 V

600 ns

10000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BC447RLRA

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BC449RLRM

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BF844RL

Onsemi

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

20

150 Cel

SILICON

400 V

600 ns

10000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BC447RLRE

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BC447RL1

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

BC449RLRE

Onsemi

PNP

SINGLE

NO

200 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BF844ZL1

Onsemi

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

20

SILICON

400 V

600 ns

10000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

225

MPS3646ZL1

Onsemi

NPN

SINGLE

NO

350 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

15

150 Cel

SILICON

15 V

18 ns

28 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MPSA44RL

Onsemi

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

KST13MTF

Onsemi

NPN

DARLINGTON

YES

125 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

10000

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395