2.7 A Small Signal Bipolar Junction Transistors (BJT) 20

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS4041PT,215

NXP Semiconductors

PNP

SINGLE

YES

1.1 W

2.7 A

1

Other Transistors

35

150 Cel

TIN

1

e3

30

260

934061031115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

SILICON

50 V

104 ns

520 ns

DUAL

R-PDSO-G8

934063401115

NXP Semiconductors

PNP

SINGLE

YES

104 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

25

SILICON

30 V

DUAL

R-PDSO-G6

934063926115

NXP Semiconductors

PNP

SINGLE

YES

115 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

100 V

DUAL

R-PDSO-N3

COLLECTOR

934062764215

NXP Semiconductors

PNP

SINGLE

YES

150 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

35

SILICON

60 V

DUAL

R-PDSO-G3

TO-236AB

934061033115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

SILICON

50 V

104 ns

520 ns

DUAL

R-PDSO-G8

934061032115

NXP Semiconductors

PNP

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-G8

PBSS4350SS

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

2 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

104 ns

520 ns

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

PBSS4350SPN,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

.55 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

PBSS4041PT

NXP Semiconductors

PNP

SINGLE

YES

150 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

35

150 Cel

SILICON

60 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PBSS9410PA

NXP Semiconductors

PNP

SINGLE

YES

115 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

15

150 Cel

SILICON

100 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

Not Qualified

e3

PBSS4032PD/T1

NXP Semiconductors

PNP

SINGLE

YES

104 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

25

150 Cel

SILICON

30 V

DUAL

R-PDSO-G6

Not Qualified

PBSS4032PD

NXP Semiconductors

PNP

SINGLE

YES

104 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

25

150 Cel

SILICON

30 V

PURE TIN

DUAL

R-PDSO-G6

1

Not Qualified

PBSS5350SS,115

NXP Semiconductors

PNP

SEPARATE, 2 ELEMENTS

YES

2 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

50 V

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

PBSS4032PD/T2

NXP Semiconductors

PNP

SINGLE

YES

104 MHz

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

25

150 Cel

SILICON

30 V

DUAL

R-PDSO-G6

Not Qualified

PBSS4350SS,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

150 Cel

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

Not Qualified

e4

PBSS5350SS

NXP Semiconductors

PNP

SEPARATE, 2 ELEMENTS

YES

2 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

PBSS4350SPN

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

.55 W

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

50 V

104 ns

520 ns

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

934061031118

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

e4

30

260

PBSS4350SSJ

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

2.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

120

SILICON

50 V

104 ns

520 ns

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

e4

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395