3.5 A Small Signal Bipolar Junction Transistors (BJT) 57

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZXT12N20DXTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

112 MHz

1.25 W

3.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

20 V

MATTE TIN

DUAL

S-PDSO-G8

1

Not Qualified

MO-187AA

e3

260

UZXTD2M832TC

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

180 MHz

3.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

10

FLATPACK

15

SILICON

20 V

QUAD

R-PQFP-F10

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZXT12N20DXTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

112 MHz

3.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

SQUARE

2

8

SMALL OUTLINE

40

150 Cel

SILICON

20 V

DUAL

S-PDSO-G8

Not Qualified

MO-187AA

NOT SPECIFIED

NOT SPECIFIED

ZXTN620MATA

Diodes Incorporated

NPN

SINGLE

YES

160 MHz

3 W

3.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

80 V

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N3

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e4

30

260

ZXTPS718MCTA

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

180 MHz

3 W

3.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

20 V

NICKEL PALLADIUM GOLD

DUAL

R-XDSO-N8

1

Not Qualified

e4

30

260

ZXTP2012ASTZ

Diodes Incorporated

PNP

SINGLE

NO

120 MHz

3.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

260

ZXTP2012ASTOA

Diodes Incorporated

PNP

SINGLE

NO

120 MHz

3.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

1

Not Qualified

e3

260

ZXTP2012ATOA

Diodes Incorporated

PNP

SINGLE

NO

120 MHz

3.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

1

Not Qualified

e3

260

2SC5738

Toshiba

NPN

SINGLE

YES

1 W

3.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395