8 A Small Signal Bipolar Junction Transistors (BJT) 30

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA2040-TL-E

Onsemi

PNP

SINGLE

YES

290 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

2SB1204T-TL-E

Onsemi

PNP

SINGLE

YES

20 W

8 A

1

Other Transistors

200

150 Cel

TIN BISMUTH

1

e6

30

260

2SD1804QTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

70

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB1204S-TL-E

Onsemi

PNP

SINGLE

YES

20 W

8 A

1

Other Transistors

140

150 Cel

TIN BISMUTH

1

e6

30

260

2SB1204QTL

Onsemi

PNP

SINGLE

YES

130 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

70

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1804TL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

35

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB1204R

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SB1204

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

35

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SD1804S

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

2SD1804

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

35

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SD1804RTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

100

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1804Q

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

2SB1204Q

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SB1204TTL

Onsemi

PNP

SINGLE

YES

130 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SC5707-E

Onsemi

NPN

SINGLE

NO

330 MHz

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

2SB1204S-E

Onsemi

PNP

SINGLE

NO

20 W

8 A

1

Other Transistors

140

150 Cel

TIN BISMUTH

e6

2SB1204TL

Onsemi

PNP

SINGLE

YES

130 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

35

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1804STL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

140

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB1204RTL

Onsemi

PNP

SINGLE

YES

130 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

100

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1804TTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB1204T

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SD1804T

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

2SB1204T-E

Onsemi

PNP

SINGLE

NO

20 W

8 A

1

Other Transistors

200

150 Cel

TIN BISMUTH

e6

2SB1204STL

Onsemi

PNP

SINGLE

YES

130 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

140

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SB1204S

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SA2040-E

Onsemi

PNP

SINGLE

NO

290 MHz

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

2SD1804R

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

934063393115

NXP Semiconductors

NPN

SINGLE

YES

95 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

250

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

PBSS4021NZ

NXP Semiconductors

NPN

SINGLE

YES

95 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

250

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

2SD1248(K)

Renesas Electronics

NPN

DARLINGTON

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

SILICON

120 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395