.25 W Small Signal Bipolar Junction Transistors (BJT) 1,386

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR142WE6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

e3

260

BCR153T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

e3

BC818K-16W

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.25 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

25 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BCR15PNE6327

Infineon Technologies

NPN AND PNP

YES

.25 W

.1 A

2

BIP General Purpose Small Signal

20

SILICON

260

BCR103U

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

140 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BCR149F

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BC850BWE6433

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

BCR198T-E6433

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

BCR162T-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR185T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

BCR148L3

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

100 MHz

.25 W

.07 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

70

SILICON

50 V

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

BC858CWE6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

BCR139F

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR

BCR141U

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

50

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

ISOLATED

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e3

BCR151F-E6433

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

SMBT3904PN-H6327

Infineon Technologies

NPN AND PNP

YES

250 MHz

.25 W

.2 A

BIP General Purpose Small Signal

30

150 Cel

1

260

BCR189F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR141L3

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.25 W

.1 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

50

SILICON

50 V

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

BCR142FL3-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR183W-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR151L3E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR103T-E6433

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR101L3E6327

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR192W-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR169W-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

BCR164T-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR183F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

260

BC848CWE6433

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BCR151T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

120 MHz

.25 W

.05 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

BC859AWE6433

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

BCR135S-E6433

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

BCR158W-E6433

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.364

e3

BC817-40W-E6433

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.25 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

170

150 Cel

SILICON

45 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

e3

BCR08PN-E6433

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.364

e3

260

BCR179T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BC857AWE6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BCR108F

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

170 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

BCR192U-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

BCR164F-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR191T

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

50

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 1

e3

BC849BT

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

BCR164T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR153L3E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR149L3E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR146F-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BC858BWE6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

BCR15PN-E6433

Infineon Technologies

NPN AND PNP

YES

.25 W

.1 A

2

BIP General Purpose Small Signal

20

SILICON

BCR149T-E6433

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395