.76 W Small Signal Bipolar Junction Transistors (BJT) 16

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N3700UBT

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004

2N3700UBG

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

Gold (Au)

DUAL

R-XDSO-N3

e4

ESA/SCC 5201/004

2N3700RUBT

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004; RH - 100K Rad(Si)

2N3700RUBG

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

Gold (Au)

DUAL

R-XDSO-N3

e4

ESA/SCC 5201/004; RH - 100K Rad(Si)

2N3700UB1

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

SOC3700HRT

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004

SOC3700RHRT

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004; RH - 100K Rad(Si)

SOC3700RHRTW

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004; RH - 100K Rad(Si)

SOC3700HRG

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

GOLD

DUAL

R-XDSO-N3

e4

ESA/SCC 5201/004

SOC3700HRTW

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

DUAL

R-XDSO-N3

ESA/SCC 5201/004

SOC3700RHRG

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

UNSPECIFIED

AMPLIFIER

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

50

200 Cel

12 pF

SILICON

80 V

-65 Cel

Gold (Au)

DUAL

R-XDSO-N3

e4

ESA/SCC 5201/004; RH - 100K Rad(Si)

SOC3700HRB

STMicroelectronics

NPN

SINGLE

YES

.76 W

1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

80 V

GOLD

DUAL

R-PDSO-N3

Not Qualified

e4

PBLS2022D,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.76 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

PBLS2023D,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.76 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

PBLS6022D,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.76 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO 1

e3

30

260

PBLS2021D,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.76 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

30

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395