1 W Small Signal Bipolar Junction Transistors (BJT) 944

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SD985-L

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

4000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

CE2A3Q-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

N0201S-T1-AT

Renesas Electronics

NPN

SINGLE

YES

100 MHz

1 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

25 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

2SD985-AZ

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2000

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

10

260

2SD986-AZ

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2000

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

10

260

2SD2046

Renesas Electronics

NPN

DARLINGTON

NO

1 W

1.5 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

3

CYLINDRICAL

Other Transistors

2000

150 Cel

BOTTOM

O-PBCY-T3

Not Qualified

CE2A3Q-T-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE1F3P

Renesas Electronics

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

BIP General Purpose Small Signal

500

150 Cel

SILICON

70 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 4.54

CE1F3P-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE1A3Q-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE2A3Q-T-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE2F3P-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

2SD985-K

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

8000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

CE2A3Q-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE1F3P-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE1A3Q-T-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

N0500S-T1-AT

Renesas Electronics

NPN

SINGLE

YES

80 MHz

1 W

.7 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

50 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

2SD975

Renesas Electronics

NPN

SINGLE

NO

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

150

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD986-L

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

4000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

CE1F3P-T-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

N0201R-T1-AT

Renesas Electronics

PNP

SINGLE

YES

90 MHz

1 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

25 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

CE1A3Q-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

N0800S-T1-AT

Renesas Electronics

NPN

SINGLE

YES

100 MHz

1 W

.3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

80 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

2SD986-M

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

CE2F3P

Renesas Electronics

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

BIP General Purpose Small Signal

500

150 Cel

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 4.54

CE1F3P-T-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE2F3P-T-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE1A3Q-T-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

N0800R-T1-AT

Renesas Electronics

PNP

SINGLE

YES

110 MHz

1 W

.3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

80 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

N0801S-T1-AT

Renesas Electronics

NPN

SINGLE

YES

80 MHz

1 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

80 V

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

CE2F3P-AY

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

CE2A3Q

Renesas Electronics

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

BIP General Purpose Small Signal

500

150 Cel

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 10

2SD1418DB

Renesas Electronics

NPN

SINGLE

YES

140 MHz

1 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

80 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SB1027EK

Renesas Electronics

PNP

SINGLE

YES

1 W

1.5 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SINGLE

R-PSSO-F3

Not Qualified

2SD1419DETL-E

Renesas Electronics

NPN

SINGLE

YES

140 MHz

1 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e6

20

260

2SA1460-L

Renesas Electronics

PNP

SINGLE

NO

400 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

60

150 Cel

SILICON

45 V

40 ns

100 ns

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

2SA1156-M

Renesas Electronics

PNP

SINGLE

NO

1 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

40

150 Cel

SILICON

400 V

1000 ns

5000 ns

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SD1368CBTL-E

Renesas Electronics

NPN

SINGLE

YES

100 MHz

1 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

50 V

TIN BISMUTH

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e6

20

260

2SB1026DM

Renesas Electronics

PNP

SINGLE

YES

140 MHz

1 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1421EE

Renesas Electronics

NPN

SINGLE

YES

1 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

160 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SA1627K

Renesas Electronics

PNP

SINGLE

NO

28 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

60

150 Cel

SILICON

600 V

500 ns

5500 ns

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

2SC2721-MA

Renesas Electronics

NPN

SINGLE

NO

110 MHz

1 W

.7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

90

150 Cel

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

2SB794-AZ

Renesas Electronics

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 W

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2000

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

10

260

2SB1048

Renesas Electronics

PNP

DARLINGTON

YES

1 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

60 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SC3209-L

Renesas Electronics

NPN

SINGLE

NO

50 MHz

1 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

150 Cel

SILICON

300 V

2000 ns

3000 ns

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

2SA1615-Z-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

1 W

.01 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

10

260

2SA1626

Renesas Electronics

PNP

SINGLE

NO

40 MHz

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

40

150 Cel

SILICON

400 V

500 ns

2700 ns

SINGLE

R-PSIP-T3

1

Not Qualified

2SD1899-Z-AZ

Renesas Electronics

NPN

SINGLE

YES

120 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

500 ns

2500 ns

TIN BISMUTH

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e6

10

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395