2 W Small Signal Bipolar Junction Transistors (BJT) 701

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

HD1A4M-T1-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD1A3M-T2

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

2SB800FM-T2

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HD1L3N-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

HD1A4A-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

2SB800FL-T1

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HR1A4M-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

2SB800FL

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HD2A4M-T1-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1A3M-T2-AZ

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HQ1L2N-T2-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

HR1F3P-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HR1A4M-T2-AZ

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

2SD999-AZ

Renesas Electronics

NPN

SINGLE

YES

130 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

25 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

10

260

HQ1F3M-T1-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

HD1A4M-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

2SB800-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

2 W

.3 A

1

Other Transistors

90

150 Cel

NOT SPECIFIED

NOT SPECIFIED

HD1A4A-T1

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1F2Q-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HD2A4A-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1L3N-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

2SB800FK

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HR1A4A-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HD2F3P-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HQ1A3M-T2-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

HD1L2Q-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

HR1A4A-T1-AZ

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HD2F3P

Renesas Electronics

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

2 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

70 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 4.55

HD2L3N-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HQ1A3M-T1-AY

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

HD2A4A-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD1F3P-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD2A4M-T1-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1L2Q-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

2SD999CK-T2

Renesas Electronics

NPN

SINGLE

YES

130 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

25 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HR1L3N-T1-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HQ1A4A-T1-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

2SD999CM-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

130 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

25 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HD1A4A-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD2A3M-T2-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

HD1L3N-T2

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1A4

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HD1L3N-T1

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD2L3N-T1-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HD2F2Q-T1-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

100

SILICON

HD2A4M-T2-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1A3M-T1-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

HD2L2Q-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395