150 MHz Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR129SH6327XTSA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

150 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR

e3

BCR149T

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.07 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

BCR573

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 0.1

NOT SPECIFIED

NOT SPECIFIED

BCR135T

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

70

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

BCR19PN

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR

BCR179L3

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.25 W

.1 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

BIP General Purpose Small Signal

120

SILICON

50 V

MATTE TIN

BOTTOM

R-XBCC-N3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

e3

PDTB123YQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTB113ZQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

934068446115

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTB114EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934059129125

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

150 Cel

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

934068447135

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTB113ZQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

PDTB123EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PDTB143EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934068447115

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTB143XQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

PDTB113EQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934068446135

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934056660135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PDTB123YQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTB143XQA,147

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

934058209146

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101

PBSS4140DPNF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PBSS5140T,235

Nexperia

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

40 V

DUAL

R-PDSO-G3

TO-236AB

PBSS302NDH

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PBSS4240ZF

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS302ND,135

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

PBSS5240ZF

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS4480XZ

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101

PBSS4240ZX

Nexperia

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS302ND,165

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

PBSS302ND,125

Nexperia

NPN

SINGLE

YES

150 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

300

SILICON

40 V

Tin (Sn)

DUAL

R-PDSO-G6

1

e3

30

260

PBSS5240ZX

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBSS4140T-Q

Nexperia

NPN

SINGLE

YES

150 MHz

.45 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

10 pF

SILICON

40 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC238PL

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

120

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

FXT601BSMTA

Diodes Incorporated

NPN

DARLINGTON

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

5000

SILICON

160 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX453

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

10

SILICON

100 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

BC239PL

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

180

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

DSS4160TQ-7

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

FCX491

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

BFS59L

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FZT489QTA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

FXT55STZ

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT68STZ

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

85

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT450STOF

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

45 V

SINGLE

R-PSIP-T3

Not Qualified

BFS97M1TC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BFS59Q

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395