180 MHz Small Signal Bipolar Junction Transistors (BJT) 686

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KSA812O

Onsemi

YES

180 MHz

.15 W

.1 A

PLASTIC/EPOXY

.3 V

RECTANGULAR

3

SMALL OUTLINE

.15 W

90

150 Cel

50 V

DUAL

FJX733YTF

Onsemi

PNP

SINGLE

YES

180 MHz

.2 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

EMX1DXV6T1G

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

KSA812YMTF

Onsemi

PNP

SINGLE

YES

180 MHz

.15 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

50 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

EMZ1DXV6T5G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

180 MHz

.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

SILICON

60 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

EMX1DXV6T5

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

EMX2DXV6T5G

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NSV2SC5658M3T5G

Onsemi

NPN

SINGLE

YES

180 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

1

e3

30

260

AEC-Q101

KSA812L

Onsemi

PNP

SINGLE

YES

180 MHz

.15 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.15 W

300

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

NSVEMX1DXV6T1G

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F6

1

e3

30

260

KSA733R

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

40

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SD1804QTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

70

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733Y-C

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

120

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SC539

Onsemi

NPN

SINGLE

NO

180 MHz

.3 W

.05 A

METAL

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

90

175 Cel

SILICON

25 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-18

2SD1804TL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

35

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733GBU

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

50 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

KSA733-C

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

40

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SC4617T1G

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2SD1804S

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

2SD1804

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

35

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SC693

Onsemi

NPN

SINGLE

NO

180 MHz

.1 W

.05 A

1

Other Transistors

240

125 Cel

1

KSA733G

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

200

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SC4617

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

2SD1803Q

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SD1803-TL-S

Onsemi

NPN

SINGLE

YES

180 MHz

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

140

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1803S

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2SD1804RTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

100

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

2SD1804Q

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

70

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

1

COLLECTOR

KSA733R-C

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

40

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SD1816T-H

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SD1803-TL-R

Onsemi

NPN

SINGLE

YES

180 MHz

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

100

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733L

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

350

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

NSV60101DMTWTBG

Onsemi

NPN

SEPARATE, 2 ELEMENTS

YES

180 MHz

2.27 W

1 A

PLASTIC/EPOXY

SWITCHING

.2 V

NO LEAD

SQUARE

2

6

SMALL OUTLINE

2.27 W

35

150 Cel

SILICON

60 V

-55 Cel

MATTE TIN

DUAL

S-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101

2SB1803T-TL-E

Onsemi

NPN

SINGLE

YES

180 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1 W

200

150 Cel

40 pF

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

KSA733CGBU

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

50 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2SD1816S-H

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

BCX71G

Onsemi

PNP

SINGLE

YES

180 MHz

.25 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

45 V

150 ns

800 ns

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

e0

10

235

2SC5658RM3T5G

Onsemi

NPN

SINGLE

YES

180 MHz

.26 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

215

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

2SD1803-TL

Onsemi

NPN

SINGLE

YES

180 MHz

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

35

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733Y

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

120

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SA1179N6-TB-E

Onsemi

PNP

SINGLE

YES

180 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

50 V

DUAL

R-PDSO-G3

TO-236AB

2SD1804STL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

140

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733G-C

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

200

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SD1816S-E

Onsemi

NPN

SINGLE

NO

180 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SC4617G

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2SD1804TTL

Onsemi

NPN

SINGLE

YES

180 MHz

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

KSA733O

Onsemi

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.25 W

70

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

TO-92

2SC538

Onsemi

NPN

SINGLE

NO

180 MHz

.3 W

.05 A

METAL

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

90

175 Cel

SILICON

25 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-18

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395