215 MHz Small Signal Bipolar Junction Transistors (BJT) 17

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZUMT619TA

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

DPLS320A-7

Diodes Incorporated

PNP

SINGLE

YES

215 MHz

.6 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

ZUMT619

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZXTD2090E6TA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1.7 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

150 ns

425 ns

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

UZXTD09N50DE6TA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

20

150 Cel

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

ZXTC2062E6TA

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

215 MHz

1.7 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signals

140

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

ZUMT619TC

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZXTD09N50DE6TC

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1.7 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

Not Qualified

30

260

ZXTD09N50DE6TA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1.7 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

UZXTD09N50DE6TC

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

20

150 Cel

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

UZUMT619

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXTD2090DE6TA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

20

SILICON

50 V

DUAL

R-PDSO-G6

HIGH RELIABILITY

AEC-Q101

UZUMT619TA

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZUMT619TC

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTD09N50DE6QTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

215 MHz

1.7 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXTN25020DFLTA

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

ZXTN25020DFHTA

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

4.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

SILICON

20 V

140 ns

425 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395