225 MHz Small Signal Bipolar Junction Transistors (BJT) 64

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PDTD123YUX

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTD143XUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

PDTD123YUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTD143ETVL

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PDTD114EUX

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

BC547BDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

200

SILICON

45 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC546ADWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

110

SILICON

65 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC548ADWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

110

SILICON

30 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC549BDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

200

SILICON

30 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC547ADWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

110

SILICON

45 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC549CDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

420

SILICON

30 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC548BDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

200

SILICON

30 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC546BDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

200

SILICON

65 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC548CDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

420

SILICON

30 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC550BDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

200

SILICON

45 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

BC550CDWP

Diodes Incorporated

NPN

SINGLE

YES

225 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

420

SILICON

45 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395