40 MHz Small Signal Bipolar Junction Transistors (BJT) 252

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA1412-ZL

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1625

Renesas Electronics

PNP

SINGLE

NO

40 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

SILICON

400 V

1000 ns

6000 ns

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

2SA1626L

Renesas Electronics

PNP

SINGLE

NO

40 MHz

1 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

40

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

2SA1625K

Renesas Electronics

PNP

SINGLE

NO

40 MHz

.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

400 V

1000 ns

6000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SA1625L

Renesas Electronics

PNP

SINGLE

NO

40 MHz

.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

400 V

1000 ns

6000 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SA1412-Z

Renesas Electronics

PNP

SINGLE

YES

40 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1412-Z-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

10

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1412-Z-AZ

Renesas Electronics

PNP

SINGLE

YES

40 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

400 V

500 ns

2700 ns

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

10

260

2SA1412-ZK-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

60

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1412-ZL-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

40

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2N6518

Samsung

PNP

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

250 V

200 ns

3.5 ns

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N6516

Samsung

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

150 Cel

SILICON

300 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395