Diodes Incorporated Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N6729M1TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

DSS5160TQ-7

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMBT9022-13

Diodes Incorporated

NPN

SINGLE

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

270

150 Cel

SILICON

40 V

DUAL

R-PDSO-G3

Not Qualified

FXT56

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

80 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX451STOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

2DA1797Q-13

Diodes Incorporated

PNP

SINGLE

YES

160 MHz

.9 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

82

150 Cel

SILICON

50 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

DDA114YK-13

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.07 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

68

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO 4.7

e0

FXT455SM

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

140 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX300DWP

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

50

SILICON

25 V

UPPER

S-XUUC-N2

Not Qualified

BCY78PQ

Diodes Incorporated

PNP

SINGLE

NO

180 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

120

SILICON

32 V

85 ns

150 ns

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

DP350T05-7

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

350 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

2N6724

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

4000

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

DXTN07060BFG-7

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

3.1 W

3 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

5

SMALL OUTLINE

40

175 Cel

30 pF

SILICON

60 V

45 ns

-55 Cel

800 ns

MATTE TIN

DUAL

R-PDSO-F5

1

COLLECTOR

e3

260

BC548PK

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

75

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC107PM1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

UZTX455

Diodes Incorporated

NPN

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

140 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

10

260

UZTX449SMTC

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6725STOA

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

4000

SILICON

50 V

SINGLE

R-PSIP-W3

Not Qualified

ZDT1147TC

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

115 MHz

5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

60

150 Cel

SILICON

12 V

150 ns

220 ns

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FXT753STZ

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

FXT605

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

500

SILICON

120 V

SINGLE

R-PSIP-W3

Not Qualified

CTA2N1P-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN FET

YES

250 MHz

.15 W

.6 A

PLASTIC/EPOXY

20 ns

.75 V

GULL WING

RECTANGULAR

1

30 ns

6

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

255 ns

TIN LEAD

DUAL

R-PDSO-G6

Not Qualified

e0

2N6717SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

DDTB122JC-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

47

SILICON

40 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

e0

BCW70TA

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

215

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

CECC

BC214PM1TA

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

140

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

CECC

BCV71RTA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

UZTX550

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

TO-92

e3

10

260

FXT551STZ

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

10

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

BC108PSTOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

120

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX341SMTA

Diodes Incorporated

NPN

SINGLE

YES

80 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

FCX718

Diodes Incorporated

PNP

SINGLE

YES

180 MHz

2 W

2.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

20 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

CTA2N1P-7-F

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN FET

YES

250 MHz

150 W

.6 A

PLASTIC/EPOXY

20 ns

.75 V

GULL WING

RECTANGULAR

1

30 ns

6

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

255 ns

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

ZTX213K

Diodes Incorporated

PNP

SINGLE

NO

200 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

80

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BFS97Q

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UBST62-70

Diodes Incorporated

PNP

DARLINGTON

YES

200 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

2000

SILICON

72 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZTX557SMTC

Diodes Incorporated

PNP

SINGLE

YES

75 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BCY79PQ

Diodes Incorporated

PNP

SINGLE

NO

180 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

120

SILICON

45 V

85 ns

150 ns

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ADTA123JCAQ-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

e3

260

AEC-Q101

UFCX493TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DXTN10060DFJBWQ-7

Diodes Incorporated

MATTE TIN

1

e3

260

ADA114EUQ-13

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

e3

30

260

AEC-Q101

DCX144EUQ-7-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

BCX20TC

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

CECC50002-236

2N3906M1TA

Diodes Incorporated

PNP

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

70 ns

300 ns

SINGLE

R-PSSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

ZXT11N20DFTA

Diodes Incorporated

NPN

SINGLE

YES

160 MHz

.806 W

2.5 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.806 W

100

150 Cel

20 pF

SILICON

20 V

122 ns

-55 Cel

295 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MPSA56SM

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

DXT2012P5-13

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

3.2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395