Fairchild Semiconductor Small Signal Bipolar Junction Transistors (BJT) 70

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SS9013FBU

Fairchild Semiconductor

NPN

SINGLE

NO

.625 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

96

150 Cel

SILICON

20 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N5089TFR

Fairchild Semiconductor

NPN

SINGLE

NO

50 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

450

150 Cel

SILICON

25 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

KSA733CLTA

Fairchild Semiconductor

PNP

SINGLE

NO

180 MHz

.25 W

.15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

350

150 Cel

SILICON

50 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MMBT3904K

Fairchild Semiconductor

NPN

SINGLE

YES

300 MHz

.35 W

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

250 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2N4125BU

Fairchild Semiconductor

PNP

SINGLE

NO

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e3

40

260

2N4125TA

Fairchild Semiconductor

PNP

SINGLE

NO

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N4125TF

Fairchild Semiconductor

PNP

SINGLE

NO

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N4125TFR

Fairchild Semiconductor

PNP

SINGLE

NO

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N4401RP

Fairchild Semiconductor

NPN

SINGLE

NO

250 MHz

.625 W

.6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

255 ns

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BC32740

Fairchild Semiconductor

PNP

SINGLE

NO

100 MHz

.625 W

.8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

170

150 Cel

SILICON

45 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MMBT3906_NL

Fairchild Semiconductor

PNP

SINGLE

YES

250 MHz

.35 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

70 ns

-55 Cel

300 ns

MATTE TIN

DUAL

R-PDSO-G3

1

COLLECTOR

Not Qualified

e3

PN4249D74Z

Fairchild Semiconductor

PNP

SINGLE

NO

.6 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N5089TA

Fairchild Semiconductor

NPN

SINGLE

NO

50 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

450

150 Cel

SILICON

25 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

KSB772YSTSTU

Fairchild Semiconductor

PNP

SINGLE

NO

80 MHz

10 W

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

30 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-126

e3

SS9015ABU

Fairchild Semiconductor

PNP

SINGLE

NO

190 MHz

.45 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

SS9015BTA

Fairchild Semiconductor

PNP

SINGLE

NO

190 MHz

.45 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

SS9015CBU

Fairchild Semiconductor

PNP

SINGLE

NO

190 MHz

.45 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

BC547BTFR

Fairchild Semiconductor

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC560CBU

Fairchild Semiconductor

PNP

SINGLE

NO

150 MHz

.625 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

420

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

KSA928A

Fairchild Semiconductor

PNP

SINGLE

NO

120 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

30 V

BOTTOM

O-PBCY-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

KSC1845

Fairchild Semiconductor

NPN

SINGLE

NO

110 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

120 V

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

NOT SPECIFIED

NOT SPECIFIED

KSP42

Fairchild Semiconductor

NPN

SINGLE

NO

50 MHz

.625 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

300 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395