Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBRP123ET-Q

Nexperia

1

30

260

AEC-Q101

934070943235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934066885115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062163115

Nexperia

934062999215

Nexperia

933917330135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934066322315

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

200

SILICON

65 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934062967215

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

TO-236AB

934065808115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069774115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934070725115

Nexperia

934069777125

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTD123YQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTD113EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934066893115

Nexperia

TIN

1

e3

30

260

AEC-Q101

934070344125

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062905115

Nexperia

934062886165

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

934069746147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

933917230135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934070945235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062876115

Nexperia

934069701115

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

934069796135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934065875315

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934067166115

Nexperia

934067162115

Nexperia

NHDTC124EU

Nexperia

TIN

1

e3

30

260

934070176147

Nexperia

TIN

1

e3

30

260

AEC-Q101

934069625115

Nexperia

NPN

SINGLE

YES

160 MHz

3 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

75

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934069137147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934070725135

Nexperia

PDTD143EUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934062847115

Nexperia

934068208135

Nexperia

934061082115

Nexperia

934062981215

Nexperia

NPN

DARLINGTON

YES

220 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20000

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

TO-236AB

934069182115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934070172147

Nexperia

TIN

1

e3

30

260

PMD9003D,125

Nexperia

934067239215

Nexperia

NPN

SINGLE

YES

80 MHz

.15 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

934070118115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTD114EQAZ

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

933917210135

Nexperia

TIN

1

e3

30

260

934069764135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934062316215

Nexperia

PMD9002D,135

Nexperia

934068217115

Nexperia

PNP

SINGLE

YES

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

140 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395