Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PRMD13Z

Nexperia

TIN

1

e3

30

260

933917250135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069144115

Nexperia

934065813115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069681115

Nexperia

Tin (Sn)

1

e3

30

260

AEC-Q101; IEC-60134

934069136115

Nexperia

934065805115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934070166147

Nexperia

TIN

1

e3

30

260

AEC-Q101

934062886135

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

934062963215

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

TO-236AB

NOT SPECIFIED

NOT SPECIFIED

934064694215

Nexperia

934065891315

Nexperia

TIN

1

e3

30

260

AEC-Q101

934067161115

Nexperia

934058365115

Nexperia

934069742147

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

934058369115

Nexperia

934061096135

Nexperia

BCM53DSX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

.5 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

934062998215

Nexperia

934058982215

Nexperia

TIN

1

e3

30

260

PDTD114ETVL

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BC860CW/ZLF

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

e3

30

260

934070117135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069654115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

NHDTA114ET

Nexperia

TIN

1

e3

30

260

BC69PASX

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

50

SILICON

20 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PMD9003D,165

Nexperia

934069723115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934069702115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934068447115

Nexperia

PNP

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

300

SILICON

40 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934069777115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934068131115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTD143ET-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.46 W

.5 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

175 Cel

7 pF

SILICON

50 V

-55 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

AEC-Q101; IEC-60134

2PA1576R-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.15 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

150 Cel

3.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

2PA1576Q-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.15 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

3.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

2PA1576S-Q

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.15 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

270

150 Cel

3.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

NHUMD9F

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BAIS RESISTOR RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

NHUMH1X

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

150 Cel

2.5 pF

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BAIS RESISTOR RATIO IS 1

e3

30

235

AEC-Q101; IEC-60134

934663675135

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

934663552135

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PIMP32

Nexperia

TIN

1

e3

30

260

PDTB123YT-Q

Nexperia

TIN

1

e3

30

260

PIMP32-Q

Nexperia

TIN

1

e3

30

260

PIMP31-Q

Nexperia

TIN

1

e3

30

260

934663629115

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

PIMP31

Nexperia

TIN

1

e3

30

260

PBLS4002Y-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCP68-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395