Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934062851115

Nexperia

934070685115

Nexperia

TIN

1

e3

30

260

934070292115

Nexperia

TIN

1

e3

30

260

934068592115

Nexperia

NPN

SINGLE

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

70

SILICON

600 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC69-25PASX

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

160

SILICON

20 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934057545135

Nexperia

TIN

1

e3

30

260

PDTD143ET,215

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BF822-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

PRMD10

Nexperia

TIN

1

e3

30

260

934069001115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

NHDTA114YT

Nexperia

TIN

1

e3

30

260

NHUMH10

Nexperia

TIN

1

e3

30

260

BCP68-25/ZL

Nexperia

934062218115

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PRMD16

Nexperia

TIN

1

e3

30

260

934069796115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934058916115

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-F6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

934070114115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

933994950215

Nexperia

934070291115

Nexperia

TIN

1

e3

30

260

934069748147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

934065886315

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062993215

Nexperia

934062956215

Nexperia

934062316235

Nexperia

PIMZ2/DG

Nexperia

934070945185

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC69-16PASX

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

100

SILICON

20 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934070941185

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069177135

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

e3

30

260

934069704135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934043510135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069645115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934062977235

Nexperia

934062302235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BCP68/ZLF

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

PUMB9/ZLH

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934062879115

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

934068109115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PBLS2003S,118

Nexperia

934069805115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PDTD123EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934065821115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068114115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069708115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934070945215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934059435315

Nexperia

TIN

1

e3

30

260

934068106115

Nexperia

NPN

SINGLE

YES

210 MHz

3 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

180

SILICON

30 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395