Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NHUMH11

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

150 Cel

2.5 pF

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

BUILT IN BAIS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934061072115

Nexperia

934069781115

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO 2.68

PQMD16,147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

934071078215

Nexperia

TIN

1

e3

30

260

AEC-Q101

934056660135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

PDTD123YUX

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

934068122115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069773165

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 4.7

934069271115

Nexperia

BCM56DS

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

155 MHz

.32 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

933917220115

Nexperia

TIN

1

e3

30

260

934068125115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BC52-16PA

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

100

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934069785125

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934058412215

Nexperia

934067162147

Nexperia

TIN

1

e3

30

260

AEC-Q101

PDTB123YQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

PDTD143XUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

NHUMB10

Nexperia

TIN

1

e3

30

260

934055429135

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.2 W

110

150 Cel

1.5 pF

SILICON

65 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

934070715215

Nexperia

PNP

SINGLE

YES

55 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

150 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

934069276147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069704115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934069148115

Nexperia

PMD9001D,165

Nexperia

934068349235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

933272320135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934067156115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PQMH9,147

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IEC-60134

934069064147

Nexperia

NPN

SINGLE

YES

75 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

35

SILICON

150 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

933272300146

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PQMH10Z

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

PRMH9Z

Nexperia

TIN

1

e3

30

260

934057894135

Nexperia

TIN

1

e3

30

260

934069139115

Nexperia

934070943215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069702135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934069141147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069678115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069792115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934070722135

Nexperia

TIN

1

e3

30

260

NHDTC123JU

Nexperia

TIN

1

e3

30

260

934069545115

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

65 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

934069764115

Nexperia

TIN

1

e3

30

260

BC869-25,135

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

AEC-Q101; IEC-60134

NHDTA143ZU

Nexperia

TIN

1

e3

30

260

PDTD123YUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 4.55

e3

30

260

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395