Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBLS2002S,118

Nexperia

NMB2227AX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

300 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

75

SILICON

40 V

35 ns

250 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

934069072115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

933674760147

Nexperia

NPN

SINGLE

YES

180 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

934070764135

Nexperia

PNP

SINGLE

YES

55 MHz

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

80

150 Cel

SILICON

400 V

DUAL

R-PDSO-G4

COLLECTOR

934070942235

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934055207135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTD114EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934071211115

Nexperia

TIN

1

e3

30

260

AEC-Q101

934009430135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934058645115

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

300 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 1

e3

30

260

933917280135

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934070941215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934058449215

Nexperia

934062311215

Nexperia

TIN

1

e3

30

260

AEC-Q101

934069144147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062973215

Nexperia

934060009115

Nexperia

TIN

1

e3

30

260

934070683135

Nexperia

TIN

1

e3

30

260

PMD9001D,135

Nexperia

PEMB9/DG

Nexperia

933917320115

Nexperia

PNP

SINGLE

YES

115 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

150 Cel

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101

NMB2227AF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

300 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

75

SILICON

40 V

35 ns

250 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

934062979215

Nexperia

934059041135

Nexperia

TIN

1

e3

30

260

934067164147

Nexperia

TIN

1

e3

30

260

AEC-Q101

934069775125

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PRMD16Z

Nexperia

TIN

1

e3

30

260

934062298215

Nexperia

PNP

SINGLE

YES

70 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

210

SILICON

45 V

DUAL

R-PDSO-G3

TO-236AB

934069744147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934068347215

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

140 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

934071077215

Nexperia

TIN

1

e3

30

260

AEC-Q101

934067938235

Nexperia

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

Tin (Sn)

DUAL

R-PDSO-G3

1

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

PBRP113ET-Q

Nexperia

TIN

1

e3

30

260

AEC-Q101

934068347235

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

140 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

934070682135

Nexperia

TIN

1

e3

30

260

PMD9002D,165

Nexperia

934070942185

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934062315215

Nexperia

TIN

1

e3

30

260

NHDTA124ET

Nexperia

TIN

1

e3

30

260

PQMD3Z

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PMD9010D,165

Nexperia

BC327-16,412

Nexperia

PNP

SINGLE

NO

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

45 V

BOTTOM

O-PBCY-W3

TO-92

934062312215

Nexperia

934069135147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068113115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PDTD123EUF

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934069866135

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

SILICON

45 V

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395