Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PUMB2-Q

Nexperia

AEC-Q101

934062972215

Nexperia

PDTD143EQA,147

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

210 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

PDTB113EUF

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

140 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

934063003215

Nexperia

934069721115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934062304215

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068123115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934065819115

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

100

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934054696235

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236AB

e3

30

260

AEC-Q101

934068128115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069779115

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTOR RATIO IS 1

934068169115

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

10

SILICON

100 V

TIN

DUAL

R-PDSO-G6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP68-25/ZLF

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

160

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934065014215

Nexperia

NHDTC143ZT

Nexperia

TIN

1

e3

30

260

PQMH10,147

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

934069131147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934068115115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934067155115

Nexperia

BC52-10PA

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

60 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

934069739147

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

934069804115

Nexperia

NOT SPECIFIED

NOT SPECIFIED

934061292115

Nexperia

PRMD13

Nexperia

TIN

1

e3

30

260

PUMB17/ZLX

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

60

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR RATIO IS 0.47

e3

30

260

934069151147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

PQMH13,147

Nexperia

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 10

e3

30

260

AEC-Q101; IEC-60134

934069263147

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934067168147

Nexperia

TIN

1

e3

30

260

AEC-Q101

934068999115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

934069137115

Nexperia

934069789135

Nexperia

934062827215

Nexperia

PNP

CURRENT MIRROR

YES

100 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

420

150 Cel

SILICON

30 V

DUAL

R-PDSO-G4

COLLECTOR

FOR TRANSISTOR2 HFE IS 420

NOT SPECIFIED

NOT SPECIFIED

934059132125

Nexperia

PNP

SINGLE

YES

110 MHz

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

NHDTC143ZU

Nexperia

TIN

1

e3

30

260

NHDTA124EU

Nexperia

TIN

1

e3

30

260

AEC-Q101

934069788135

Nexperia

NOT SPECIFIED

NOT SPECIFIED

PRMD12Z

Nexperia

TIN

1

e3

30

260

934062871115

Nexperia

BC869-25,146

Nexperia

PQMD10,147

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

230 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 21

e3

30

260

AEC-Q101; IEC-60134

934063185115

Nexperia

BC868-25,135

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

AEC-Q101; IEC-60134

934065822115

Nexperia

TIN

1

e3

30

260

AEC-Q101; IEC-60134

BCP69-16,135

Nexperia

PNP

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PDTB143XQAZ

Nexperia

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 2.13

e3

30

260

AEC-Q101; IEC-60134

PQMB11,147

Nexperia

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

180 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395